| Anzahl | Privatkunde |
|---|---|
| 31+ | 5.93 EUR |
| 32+ | 5.59 EUR |
| 50+ | 5.26 EUR |
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Technische Details IXTP48P05T Littelfuse
Description: MOSFET P-CH 50V 48A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V.
Weitere Produktangebote IXTP48P05T nach Preis ab 4.82 EUR bis 11.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTP48P05T | IXYS |
MOSFETs TenchP Power MOSFET |
auf Bestellung 268 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP48P05T | IXYS |
Description: MOSFET P-CH 50V 48A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V |
auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP48P05T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -48A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 30mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 30ns |
auf Bestellung 291 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXTP48P05T | Ixys Corporation |
Trans MOSFET P-CH 50V 48A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 291 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTP48P05T |
![]() |
Hersteller: IXYS
MOSFETs TenchP Power MOSFET
MOSFETs TenchP Power MOSFET
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.06 EUR |
| 10+ | 5.84 EUR |
| 100+ | 5.32 EUR |
| 500+ | 4.82 EUR |
| IXTP48P05T |
![]() |
Hersteller: IXYS
Description: MOSFET P-CH 50V 48A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Description: MOSFET P-CH 50V 48A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.29 EUR |
| 10+ | 7.54 EUR |
| 50+ | 5.94 EUR |
| 100+ | 5.43 EUR |
| IXTP48P05T |
![]() |
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 30ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 30ns
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP48P05T |
![]() |
Hersteller: Ixys Corporation
Trans MOSFET P-CH 50V 48A 3-Pin(3+Tab) TO-220AB
Trans MOSFET P-CH 50V 48A 3-Pin(3+Tab) TO-220AB
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 7.27 EUR |
| 50+ | 6.28 EUR |
| 100+ | 5.78 EUR |
| 250+ | 5.55 EUR |





