Technische Details IXTT500N04T2 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns, Mounting: SMD, Type of transistor: N-MOSFET, Features of semiconductor devices: thrench gate power mosfet, Kind of package: tube, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 500A, Reverse recovery time: 84ns, Gate charge: 405nC, On-state resistance: 1.6mΩ, Power dissipation: 1kW, Case: TO268, Kind of channel: enhancement.
Weitere Produktangebote IXTT500N04T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTT500N04T2 | Hersteller : IXYS |
 MOSFET Trench T2 Power MOSFET |
Produkt ist nicht verfügbar |
|
 |
IXTT500N04T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns Mounting: SMD Type of transistor: N-MOSFET Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Polarisation: unipolar Drain-source voltage: 40V Drain current: 500A Reverse recovery time: 84ns Gate charge: 405nC On-state resistance: 1.6mΩ Power dissipation: 1kW Case: TO268 Kind of channel: enhancement |
Produkt ist nicht verfügbar |