IXTT500N04T2 IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Reverse recovery time: 84ns
Gate charge: 405nC
On-state resistance: 1.6mΩ
Power dissipation: 1kW
Case: TO268
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IXTT500N04T2 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns, Mounting: SMD, Type of transistor: N-MOSFET, Features of semiconductor devices: thrench gate power mosfet, Kind of package: tube, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 500A, Reverse recovery time: 84ns, Gate charge: 405nC, On-state resistance: 1.6mΩ, Power dissipation: 1kW, Case: TO268, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
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IXTT500N04T2 | Hersteller : IXYS |
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IXTT500N04T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns Mounting: SMD Type of transistor: N-MOSFET Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Polarisation: unipolar Drain-source voltage: 40V Drain current: 500A Reverse recovery time: 84ns Gate charge: 405nC On-state resistance: 1.6mΩ Power dissipation: 1kW Case: TO268 Kind of channel: enhancement |
Produkt ist nicht verfügbar |