auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.75 EUR |
| 10+ | 7.36 EUR |
| 50+ | 6.92 EUR |
| 100+ | 5.93 EUR |
| 250+ | 5.6 EUR |
| 500+ | 5.26 EUR |
| 1000+ | 4.52 EUR |
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Technische Details IXTP460P2 IXYS
Description: MOSFET N-CH 500V 24A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V.
Weitere Produktangebote IXTP460P2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTP460P2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP460P2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP460P2 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 24A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTP460P2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 480W Case: TO220AB On-state resistance: 0.27Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |