| Anzahl | Preis |
|---|---|
| 1+ | 8.75 EUR |
| 10+ | 7.36 EUR |
| 50+ | 6.92 EUR |
| 100+ | 5.93 EUR |
| 250+ | 5.6 EUR |
| 500+ | 5.26 EUR |
| 1000+ | 4.52 EUR |
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Technische Details IXTP460P2 IXYS
Description: MOSFET N-CH 500V 24A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 480W (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP460P2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTP460P2 | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 24A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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