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IXTK20N150


238_DS100424BIXTKTX20N150.pdf
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MOSFET N-CH 1500V 20A TO-264 Транзистори
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Technische Details IXTK20N150

Description: MOSFET N-CH 1500V 20A TO264, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Drain to Source Voltage (Vdss): 1500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 1250W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.

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IXTK20N150 IXTK20N150 Hersteller : IXYS 238_DS100424BIXTKTX20N150.pdf Description: MOSFET N-CH 1500V 20A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXTK20N150 IXTK20N150 Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_20N150_Datasheet.PDF MOSFETs 1200V High Voltage Power MOSFET
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