auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 43.28 EUR |
| 10+ | 39.92 EUR |
| 25+ | 38.1 EUR |
| 100+ | 34.07 EUR |
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Technische Details IXYK100N120C3 IXYS
Description: IGBT 1200V 188A 1150W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A, Supplier Device Package: TO-264 (IXYK), Td (on/off) @ 25°C: 32ns/123ns, Switching Energy: 6.5mJ (on), 2.9mJ (off), Test Condition: 600V, 100A, 1Ohm, 15V, Gate Charge: 270 nC, Part Status: Active, Current - Collector (Ic) (Max): 188 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 490 A, Power - Max: 1150 W.
Weitere Produktangebote IXYK100N120C3 nach Preis ab 42.71 EUR bis 46.31 EUR
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IXYK100N120C3 | Hersteller : IXYS |
 Description: IGBT 1200V 188A 1150W TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Supplier Device Package: TO-264 (IXYK) Td (on/off) @ 25°C: 32ns/123ns Switching Energy: 6.5mJ (on), 2.9mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 188 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 490 A Power - Max: 1150 W |
auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYK100N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 100A Power dissipation: 1.15kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 260C Kind of package: tube Turn-on time: 143ns Turn-off time: 271ns |
Produkt ist nicht verfügbar |
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IXYK100N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 100A Power dissipation: 1.15kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 260C Kind of package: tube Turn-on time: 143ns Turn-off time: 271ns |
Produkt ist nicht verfügbar |