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Technische Details IXTH420N04T2 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 420A, Power dissipation: 935W, Case: TO247-3, On-state resistance: 2mΩ, Mounting: THT, Gate charge: 315nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 74ns, Features of semiconductor devices: thrench gate power mosfet.
Weitere Produktangebote IXTH420N04T2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTH420N04T2 | IXYS |
 MOSFET Trench T2 Power MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH420N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 420A Power dissipation: 935W Case: TO247-3 On-state resistance: 2mΩ Mounting: THT Gate charge: 315nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 74ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTH420N04T2 |
|
Hersteller: IXYS
MOSFET Trench T2 Power MOSFET
MOSFET Trench T2 Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH420N04T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH