FDM47-06KC5 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Gate charge: 150nC
Polarisation: unipolar
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Features of semiconductor devices: super junction coolmos
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Semiconductor structure: diode/transistor
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 45mΩ
Topology: buck chopper
Mounting: THT
Produktrezensionen
Produktbewertung abgeben
Technische Details FDM47-06KC5 IXYS
Description: MOSFET N-CH 600V 47A I4PAC, Packaging: Tube, Package / Case: ISOPLUSi5-Pak™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: ISOPLUS i4-PAC™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V.
Weitere Produktangebote FDM47-06KC5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| FDM47-06KC5 | IXYS |
Description: MOSFET N-CH 600V 47A I4PAC Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: ISOPLUS i4-PAC™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
FDM47-06KC5 | IXYS |
MOSFETs CoolMOS Power MOSFET w/ HiPerDyn FRED |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDM47-06KC5 | Littelfuse |
Trans MOSFET N-CH Si 600V 47A 5-Pin(5+Tab) ISOPLUS I4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDM47-06KC5 |
|
Hersteller: IXYS
Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDM47-06KC5 |
|
Hersteller: IXYS
MOSFETs CoolMOS Power MOSFET w/ HiPerDyn FRED
MOSFETs CoolMOS Power MOSFET w/ HiPerDyn FRED
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDM47-06KC5 |
|
Hersteller: Littelfuse
Trans MOSFET N-CH Si 600V 47A 5-Pin(5+Tab) ISOPLUS I4
Trans MOSFET N-CH Si 600V 47A 5-Pin(5+Tab) ISOPLUS I4
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH