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FDM47-06KC5
  • FDM47-06KC5
  • FDM47-06KC5

FDM47-06KC5 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F363DA39EA5820&compId=FDM47-06KC5.pdf?ci_sign=01c8a9463d526f84120914de2773f068278b2c9b Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Mounting: THT
Topology: buck chopper
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Semiconductor structure: diode/transistor
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: super junction coolmos
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 45mΩ
Drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 600V
Case: ISOPLUS i4-pac™ x024a
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.65 EUR
10+10.24 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDM47-06KC5 IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A, Mounting: THT, Topology: buck chopper, Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations, Semiconductor structure: diode/transistor, Kind of channel: enhancement, Type of transistor: N-MOSFET, Features of semiconductor devices: super junction coolmos, Kind of package: tube, Polarisation: unipolar, Gate charge: 150nC, On-state resistance: 45mΩ, Drain current: 32A, Gate-source voltage: ±20V, Drain-source voltage: 600V, Case: ISOPLUS i4-pac™ x024a, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote FDM47-06KC5 nach Preis ab 10.24 EUR bis 10.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDM47-06KC5
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FDM47-06KC5 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F363DA39EA5820&compId=FDM47-06KC5.pdf?ci_sign=01c8a9463d526f84120914de2773f068278b2c9b Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Mounting: THT
Topology: buck chopper
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Semiconductor structure: diode/transistor
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: super junction coolmos
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 45mΩ
Drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 600V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.65 EUR
10+10.24 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
FDM47-06KC5 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__47-06kc5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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FDM47-06KC5 FDM47-06KC5 Hersteller : IXYS media-3321906.pdf MOSFETs CoolMOS Power MOSFET w/ HiPerDyn FRED
Produkt ist nicht verfügbar
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