FMD15-06KC5 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Semiconductor structure: diode/transistor
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
Technology: HiPerDynFRED
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Drain-source voltage: 600V
Drain current: 15A
On-state resistance: 0.165Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 16.65 EUR |
| 25+ | 16 EUR |
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Technische Details FMD15-06KC5 IXYS
Description: MOSFET N-CH 600V 15A I4PAC, Packaging: Tube, Package / Case: ISOPLUSi5-Pak™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 790µA, Supplier Device Package: ISOPLUS i4-PAC™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V.
Weitere Produktangebote FMD15-06KC5 nach Preis ab 16.65 EUR bis 29.92 EUR
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FMD15-06KC5 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A Semiconductor structure: diode/transistor Topology: boost chopper Case: ISOPLUS i4-pac™ x024a Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tube Features of semiconductor devices: super junction coolmos Gate charge: 40nC Technology: HiPerDynFRED Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Drain-source voltage: 600V Drain current: 15A On-state resistance: 0.165Ω |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| FMD15-06KC5 | Hersteller : IXYS |
Description: MOSFET N-CH 600V 15A I4PAC Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Supplier Device Package: ISOPLUS i4-PAC™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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FMD15-06KC5 Produktcode: 139204
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