Technische Details MCD132-12IO1 Littelfuse
Category: Diode - thyristor modules, Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk, Case: Y4-M6, Kind of package: bulk, Threshold on-voltage: 0.8V, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: diode-thyristor, Features of semiconductor devices: Kelvin terminal, Max. off-state voltage: 1.2kV, Max. load current: 300A, Max. forward voltage: 1.08V, Load current: 130A, Semiconductor structure: double series, Gate current: 150/200mA, Max. forward impulse current: 4.75kA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MCD132-12IO1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MCD132-12io1 | Hersteller : IXYS |
 Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Threshold on-voltage: 0.8V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Max. off-state voltage: 1.2kV Max. load current: 300A Max. forward voltage: 1.08V Load current: 130A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 4.75kA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MCD132-12io1 | Hersteller : IXYS |
Description: MOD THYRISTOR/DIODE 1200V Y4-M6 |
Produkt ist nicht verfügbar |
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MCD132-12io1 | Hersteller : IXYS |
Discrete Semiconductor Modules 132 Amps 1200V |
Produkt ist nicht verfügbar |
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| MCD132-12io1 | Hersteller : IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Threshold on-voltage: 0.8V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Max. off-state voltage: 1.2kV Max. load current: 300A Max. forward voltage: 1.08V Load current: 130A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 4.75kA |
Produkt ist nicht verfügbar |