IXTH3N150 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1500V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.28 EUR |
| 30+ | 20.54 EUR |
| 60+ | 19.03 EUR |
| 120+ | 17.75 EUR |
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Technische Details IXTH3N150 IXYS
Description: MOSFET N-CH 1500V 3A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V.
Weitere Produktangebote IXTH3N150 nach Preis ab 18.99 EUR bis 33.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTH3N150 | IXYS |
MOSFETs High Voltage Power MOSFET |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTH3N150 |
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Hersteller: IXYS
MOSFETs High Voltage Power MOSFET
MOSFETs High Voltage Power MOSFET
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.43 EUR |
| 10+ | 19.12 EUR |
| 120+ | 18.99 EUR |


