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Technische Details IXFK170N10P Littelfuse
Description: MOSFET N-CH 100V 170A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V, Power Dissipation (Max): 715W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Weitere Produktangebote IXFK170N10P nach Preis ab 13.05 EUR bis 22.63 EUR
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IXFK170N10P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-264AA |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK170N10P | Hersteller : IXYS |
MOSFETs PolarHT HiperFET 100v, 170A |
auf Bestellung 1378 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK170N10P | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-264AA |
Produkt ist nicht verfügbar |
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IXFK170N10P | Hersteller : IXYS |
Description: MOSFET N-CH 100V 170A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Power Dissipation (Max): 715W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK170N10P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO264 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns |
Produkt ist nicht verfügbar |