IXFP34N65X3 IXYS
Hersteller: IXYS
Description: MOSFET 34A 650V X3 TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-220-3 (IXFP)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 2+ | 16.79 EUR |
| 50+ | 9.37 EUR |
| 100+ | 8.65 EUR |
| 500+ | 7.4 EUR |
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Technische Details IXFP34N65X3 IXYS
Description: MOSFET 34A 650V X3 TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 2.5mA, Supplier Device Package: TO-220-3 (IXFP), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V.
Weitere Produktangebote IXFP34N65X3 nach Preis ab 8.61 EUR bis 17 EUR
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IXFP34N65X3 | Hersteller : IXYS |
MOSFETs TO220 650V 34A N-CH X3CLASS |
auf Bestellung 684 Stücke: Lieferzeit 10-14 Tag (e) |
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