CPC5602CTR IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.06 EUR |
| 47+ | 1.83 EUR |
| 100+ | 1.3 EUR |
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Technische Details CPC5602CTR IXYS
Description: MOSFET N-CH 350V 5MA SOT-223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 5mA (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV, Power Dissipation (Max): 2.5W (Ta), Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 0.35V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V.
Weitere Produktangebote CPC5602CTR nach Preis ab 2.08 EUR bis 4.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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CPC5602CTR | Ixys Corporation |
Trans MOSFET N-CH Si 350V 0.005A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC5602CTR | IXYS Integrated Circuits Division |
Description: MOSFET N-CH 350V 5MA SOT-223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 5mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV Power Dissipation (Max): 2.5W (Ta) Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 0.35V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CPC5602CTR |
|
Hersteller: Ixys Corporation
Trans MOSFET N-CH Si 350V 0.005A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH Si 350V 0.005A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 57+ | 3.03 EUR |
| 100+ | 2.08 EUR |
| CPC5602CTR |
|
Hersteller: IXYS Integrated Circuits Division
Description: MOSFET N-CH 350V 5MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 0.35V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V
Description: MOSFET N-CH 350V 5MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 0.35V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.36 EUR |
| 10+ | 2.8 EUR |