CPC5602CTR IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Drain current: 0.13A
Power dissipation: 2.5W
On-state resistance: 14Ω
Gate-source voltage: ±20V
Drain-source voltage: 350V
Polarisation: unipolar
| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 88+ | 0.82 EUR |
| 125+ | 0.57 EUR |
| 250+ | 0.5 EUR |
| 500+ | 0.47 EUR |
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Technische Details CPC5602CTR IXYS
Description: MOSFET N-CH 350V 5MA SOT-223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 5mA (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV, Power Dissipation (Max): 2.5W (Ta), Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 0.35V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V.
Weitere Produktangebote CPC5602CTR nach Preis ab 0.5 EUR bis 2.18 EUR
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CPC5602CTR | IXYS Integrated Circuits Division |
Description: MOSFET N-CH 350V 5MA SOT-223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 5mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV Power Dissipation (Max): 2.5W (Ta) Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 0.35V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V |
auf Bestellung 23000 Stücke: Lieferzeit 10-14 Tag (e) |
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CPC5602CTR | IXYS Integrated Circuits |
MOSFETs N Ch Dep Mode FET 350V |
auf Bestellung 3111 Stücke: Lieferzeit 10-14 Tag (e) |
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CPC5602CTR | IXYS Integrated Circuits Division |
Description: MOSFET N-CH 350V 5MA SOT-223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 5mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV Power Dissipation (Max): 2.5W (Ta) Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 0.35V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V |
auf Bestellung 23681 Stücke: Lieferzeit 10-14 Tag (e) |
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| CPC5602CTR |
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Hersteller: IXYS Integrated Circuits Division
Description: MOSFET N-CH 350V 5MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 0.35V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V
Description: MOSFET N-CH 350V 5MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 0.35V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.65 EUR |
| 2000+ | 0.59 EUR |
| 3000+ | 0.57 EUR |
| 5000+ | 0.53 EUR |
| 7000+ | 0.52 EUR |
| 10000+ | 0.5 EUR |
| CPC5602CTR |
|
Hersteller: IXYS Integrated Circuits
MOSFETs N Ch Dep Mode FET 350V
MOSFETs N Ch Dep Mode FET 350V
auf Bestellung 3111 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.66 EUR |
| 10+ | 1.29 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.62 EUR |
| 2000+ | 0.56 EUR |
| CPC5602CTR |
|
Hersteller: IXYS Integrated Circuits Division
Description: MOSFET N-CH 350V 5MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 0.35V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V
Description: MOSFET N-CH 350V 5MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 0.35V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V
auf Bestellung 23681 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.18 EUR |
| 13+ | 1.38 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.71 EUR |