IXFK170N20P
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Група товару: Транзистори Од. вим: шт
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Technische Details IXFK170N20P
Description: MOSFET N-CH 200V 170A TO264AA, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 1250W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), FET Type: N-Channel.
Weitere Produktangebote IXFK170N20P
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IXFK170N20P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 200V 170A TO264AA Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) FET Type: N-Channel |
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IXFK170N20P | Hersteller : IXYS |
MOSFETs 170 Amps 200V 0.014 Rds |
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IXFK170N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 170A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |