Weitere Produktangebote IXFR48N60P nach Preis ab 25.87 EUR bis 47.31 EUR
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IXFR48N60P | IXYS |
 Description: MOSFET N-CH 600V 32A ISOPLUS247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 24A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V |
auf Bestellung 540 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFR48N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Power dissipation: 300W Case: ISOPLUS247™ Mounting: THT Gate charge: 150nC Kind of package: tube Polarisation: unipolar Drain current: 32A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 0.15Ω |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFR48N60P |
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Hersteller: IXYS
Description: MOSFET N-CH 600V 32A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 24A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
Description: MOSFET N-CH 600V 32A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 24A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.31 EUR |
| 30+ | 30.07 EUR |
| 60+ | 28.01 EUR |
| 120+ | 26.3 EUR |
| 510+ | 25.87 EUR |
| IXFR48N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 300W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.15Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 300W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.15Ω
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)