MMIX1Y100N120C3H1 IXYS
Hersteller: IXYS
Description: IGBT 1200V 92A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
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Technische Details MMIX1Y100N120C3H1 IXYS
Description: IGBT 1200V 92A 24-SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 420 ns, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A, Supplier Device Package: 24-SMPD, Td (on/off) @ 25°C: 48ns/123ns, Switching Energy: 6.5mJ (on), 2.9mJ (off), Test Condition: 600V, 100A, 1Ohm, 15V, Gate Charge: 270 nC, Part Status: Active, Current - Collector (Ic) (Max): 92 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 440 A, Power - Max: 400 W.
Weitere Produktangebote MMIX1Y100N120C3H1
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MMIX1Y100N120C3H1 | Hersteller : IXYS |
IGBT Modules SMPD IGBTs Power Device |
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| MMIX1Y100N120C3H1 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 440A Mounting: SMD Gate charge: 0.27µC Kind of package: tube Turn-on time: 122ns Turn-off time: 265ns |
Produkt ist nicht verfügbar |