Technische Details IXTY1N100P Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns, Mounting: SMD, Case: TO252, Polarisation: unipolar, Reverse recovery time: 750ns, Drain current: 1A, On-state resistance: 15Ω, Kind of channel: enhancement, Power dissipation: 50W, Features of semiconductor devices: standard power mosfet, Drain-source voltage: 1kV, Type of transistor: N-MOSFET, Kind of package: tube, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTY1N100P
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IXTY1N100P | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns Mounting: SMD Case: TO252 Polarisation: unipolar Reverse recovery time: 750ns Drain current: 1A On-state resistance: 15Ω Kind of channel: enhancement Power dissipation: 50W Features of semiconductor devices: standard power mosfet Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTY1N100P | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 1A TO-252 |
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IXTY1N100P | Hersteller : IXYS |
MOSFET 1 Amps 1000V 14 Rds |
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IXTY1N100P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns Mounting: SMD Case: TO252 Polarisation: unipolar Reverse recovery time: 750ns Drain current: 1A On-state resistance: 15Ω Kind of channel: enhancement Power dissipation: 50W Features of semiconductor devices: standard power mosfet Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube |
Produkt ist nicht verfügbar |