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Technische Details IXTY1N100P IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns, Type of transistor: N-MOSFET, Power dissipation: 50W, Case: TO252, Mounting: SMD, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: standard power mosfet, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 1A, Reverse recovery time: 750ns, On-state resistance: 15Ω.
Weitere Produktangebote IXTY1N100P
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IXTY1N100P | Hersteller : IXYS |
 MOSFET 1 Amps 1000V 14 Rds |
Produkt ist nicht verfügbar |
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IXTY1N100P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns Type of transistor: N-MOSFET Power dissipation: 50W Case: TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1A Reverse recovery time: 750ns On-state resistance: 15Ω |
Produkt ist nicht verfügbar |