Technische Details MID550-12A4 IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT, Case: Y3-DCB, Application: motors, Power dissipation: 2.75kW, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: NPT, Topology: boost chopper, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 460A, Pulsed collector current: 800A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MID550-12A4
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MID550-12A4 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Case: Y3-DCB Application: motors Power dissipation: 2.75kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: boost chopper Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 460A Pulsed collector current: 800A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MID550-12A4 | Hersteller : IXYS | Description: MOD IGBT RBSOA 1200V 670A Y3-DCB |
Produkt ist nicht verfügbar |
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MID550-12A4 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Case: Y3-DCB Application: motors Power dissipation: 2.75kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: boost chopper Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 460A Pulsed collector current: 800A |
Produkt ist nicht verfügbar |