auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 56.69 EUR |
| 10+ | 45.6 EUR |
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Technische Details IXFN80N50P IXYS
Description: MOSFET N-CH 500V 66A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V.
Weitere Produktangebote IXFN80N50P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFN80N50P Produktcode: 23719 |
Hersteller : IXYS |
 Transistoren > MOSFET N-CHGehäuse: miniBLOC Uds,V: 500 Idd,A: 65 Ciss, pF/Qg, nC: 1270/195 Bem.: <200 ns |
Produkt ist nicht verfügbar
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IXFN80N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 66A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN80N50P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 66A Pulsed drain current: 200A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 65mΩ Gate charge: 195nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN80N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 66A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN80N50P | Hersteller : IXYS |
Description: MOSFET N-CH 500V 66A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN80N50P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 66A Pulsed drain current: 200A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 65mΩ Gate charge: 195nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |