CPC3902ZTR IXYS Integrated Circuits Division
Hersteller: IXYS Integrated Circuits Division
Description: MOSFET N-CH 250V SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 0V
Power Dissipation (Max): 1.8W (Tc)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 20 V
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Technische Details CPC3902ZTR IXYS Integrated Circuits Division
Description: MOSFET N-CH 250V SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 110°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 0V, Power Dissipation (Max): 1.8W (Tc), Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 250 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 20 V.
Weitere Produktangebote CPC3902ZTR nach Preis ab 0.61 EUR bis 2.16 EUR
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CPC3902ZTR | IXYS Integrated Circuits |
MOSFET 250V N-Channel Depletion-Mode FET |
auf Bestellung 1758 Stücke: Lieferzeit 10-14 Tag (e) |
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CPC3902ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223 Kind of channel: depletion Mounting: SMD Case: SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.4A Power dissipation: 1.8W On-state resistance: 2.5Ω Gate-source voltage: ±15V Drain-source voltage: 250V Kind of package: reel; tape |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC3902ZTR | IXYS Integrated Circuits Division |
Description: MOSFET N-CH 250V SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 0V Power Dissipation (Max): 1.8W (Tc) Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 20 V |
auf Bestellung 2073 Stücke: Lieferzeit 10-14 Tag (e) |
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| CPC3902ZTR |
|
Hersteller: IXYS Integrated Circuits
MOSFET 250V N-Channel Depletion-Mode FET
MOSFET 250V N-Channel Depletion-Mode FET
auf Bestellung 1758 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.27 EUR |
| 10+ | 1.16 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.66 EUR |
| 2000+ | 0.62 EUR |
| 5000+ | 0.61 EUR |
| CPC3902ZTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Kind of channel: depletion
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 1.8W
On-state resistance: 2.5Ω
Gate-source voltage: ±15V
Drain-source voltage: 250V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Kind of channel: depletion
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 1.8W
On-state resistance: 2.5Ω
Gate-source voltage: ±15V
Drain-source voltage: 250V
Kind of package: reel; tape
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 78+ | 0.92 EUR |
| CPC3902ZTR |
|
Hersteller: IXYS Integrated Circuits Division
Description: MOSFET N-CH 250V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 0V
Power Dissipation (Max): 1.8W (Tc)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 20 V
Description: MOSFET N-CH 250V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 0V
Power Dissipation (Max): 1.8W (Tc)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 20 V
auf Bestellung 2073 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 13+ | 1.36 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.71 EUR |