auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 6.21 EUR |
| 30+ | 4.93 EUR |
| 120+ | 4.59 EUR |
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Technische Details IXTH260N055T2 Littelfuse
Description: MOSFET N-CH 55V 260A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V.
Weitere Produktangebote IXTH260N055T2 nach Preis ab 4.59 EUR bis 11.19 EUR
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IXTH260N055T2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 55V 260A 3-Pin(3+Tab) TO-247 |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH260N055T2 | Hersteller : IXYS |
MOSFETs TRENCHT2 PWR MOSFET 55V 260A |
auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH260N055T2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 55V 260A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V |
auf Bestellung 214 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH260N055T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 55V 260A Automotive 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH260N055T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns Case: TO247-3 Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 0.14µC Reverse recovery time: 60ns On-state resistance: 3.3mΩ Drain current: 260A Power dissipation: 480W Drain-source voltage: 55V Kind of channel: enhancement |
Produkt ist nicht verfügbar |