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GBLC15C GBLC15C MDD SOD323LC15CSEC.pdf Description: TVS DIODE15VWM 24VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Power - Peak Pulse: 300W
Power Line Protection: Yes
Part Status: Active
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GBLC24C GBLC24C MDD SOD323LC24CSHC.pdf Description: TVS DIODE 24VWM SOD323
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.8pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: Yes
Power - Peak Pulse: 300W
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
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GBU1008 GBU1008 MDD GBU100800L1080.pdf Description: BRIDGE RECT 1P 800V 416MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 416 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBU1010 GBU1010 MDD GBU1010.pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GBU1010 MDD GBU10005-GBU1010%20N1770%20REV.A.pdf GBU1010.pdf ds30052.pdf GBU10xx.pdf 5272_GBU1010.pdf 1736907114570365.pdf 10A, 1000V (аналог GBU10M) Діодні мости малопотужні
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GBU406 GBU406 MDD GBU0406000L460.pdf description Description: BRIDGE RECT 1P 600V 166MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 166 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBU410 GBU410 MDD GBU0410000L40A.pdf Description: BRIDGE RECT 1PHASE 1KV 166MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 166 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBU610 GBU610 MDD GBU0610000L60A.pdf Description: BRIDGE RECT 1PHASE 1KV 250MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 250 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBU806 GBU806 MDD GBU8060000L860.pdf Description: BRIDGE RECT 1P 600V 333MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 333 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBU808 GBU808 MDD GBU0808000L880.pdf Description: BRIDGE RECT 1P 800V 333MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 333 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBU810 MDD GBU8005-GBU810%20N1809%20REV.A.pdf RECT BRIDGE GPP 8A 1000V GBU Діодні мости малопотужні
Produkt ist nicht verfügbar
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GBU810 L GBU810 L MDD GBU8100000L80A.pdf Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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HER108-T/B HER108-T/B MDD HER108-T_B.pdf Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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KBL406 KBL406 MDD KBL4060000L460.pdf description Description: BRIDGE RECT 1P 600V 166MA KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 166 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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KBL410 KBL410 MDD KBL4100000L40A.pdf Description: BRIDGE RECT 1PHASE 1KV 166MA KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 166 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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KBL608 KBL608 MDD KBL6080000L680.pdf Description: BRIDGE RECT 1P 800V 250MA KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 250 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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KBL610 KBL610 MDD KBL6100000L60A.pdf Description: BRIDGE RECT 1PHASE 1KV 250MA KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 250 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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KBP210 KBP210 MDD KBP210.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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KBP210 MDD KBP210.pdf 5272_KBP210.pdf BRIDGE RECT 1kV 2A KBP Діодні мости малопотужні
Produkt ist nicht verfügbar
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KBP210 L KBP210 L MDD KBP2100000L20A.pdf Description: BRIDGE RECTIFIER KBP 1KV 2A
Produkt ist nicht verfügbar
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KBP307 L KBP307 L MDD KBP3070000L360.pdf Description: BRIDGE RECT 1PHASE 600V 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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KBP310 L KBP310 L MDD KBP3100000L30A.pdf Description: BRIDGE RECT 1PHASE 1KV 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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KBPC3510 KBPC3510 MDD KBPC3510.pdf description Description: BRIDGE RECT 1PHASE 1KV 35A KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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KBPC3510 MDD KBPC3510.pdf KBPC3510.pdf?rlkey=igybglwoa5z05kr86n896snem&st=6nfmif4u&dl=0 description Io=35A, Vdc=1000V Діодні мости малопотужні
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KBPC5010 KBPC5010 MDD KBPC50100L500A.pdf description Description: BRIDGE RECT 1PHASE 1KV 50A KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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KBPC5010 MDD KBPC50100L500A.pdf KBPC5010.pdf?rlkey=yg1yo2me3dvfnfkezxyu2hhum&st=651c89kk&dl=0 description 50A, 1000V, корпус MB-25 Діодні мости малопотужні
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KBPC610 KBPC610 MDD KBPC610000L60A.pdf Description: BRIDGE RECT 1P 1KV 250MA KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 250 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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KBU1010 KBU1010 MDD KBU101000L100A.pdf Description: BRIDGE RECT 1PHASE 1KV 416MA KBU
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 416 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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400+3.01 EUR
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KBU1510 KBU1510 MDD KBU151000L150A.pdf Description: BRIDGE RECT 1PHASE 1KV 15A KBU
Packaging: Box
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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KBU2510 KBU2510 MDD KBU251000L250A.pdf Description: BRIDGE RECT 1PHASE 1KV 25A KBU
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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400+3.77 EUR
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KBU810 KBU810 MDD KBU8100000L80A.pdf Description: BRIDGE RECT 1PHASE 1KV 333MA KBU
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 333 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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400+2.67 EUR
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KMB14F KMB14F MDD MBFKMB14FS1004.pdf Description: BRIDGE RECT 1PHASE 40V 1A KMB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 1250°C (TJ)
Technology: Standard
Supplier Device Package: MBF
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 mA @ 40 V
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10000+0.2 EUR
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KMB16F KMB16F MDD MBFKMB16FS1006.pdf Description: BRIDGE RECT 1PHASE 60V 1A KMB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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LL4148 LL4148 MDD LL4148.pdf Description: DIODE STANDARD 75V 200MA LL34
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5000+0.23 EUR
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M4 M4 MDD SMAM400000S140.pdf Description: DIODE STANDARD 400V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-214AC, SMA
Mounting Type: Surface Mount
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
auf Bestellung 20000 Stücke:
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10000+0.13 EUR
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MB10F MB10F MDD MB10F.pdf Description: BRIDGE RECT 1PHASE 1KV 1A MBF
auf Bestellung 1490000 Stücke:
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10000+0.21 EUR
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MB110S MB110S MDD MBSMB110S0S110.pdf Description: BRIDGE RECT 1PHASE 100V 1A MBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 6000 Stücke:
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3000+1.44 EUR
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MB6S MB6S MDD MBSMB6S000S160.pdf Description: BRIDGE RECT 1P 600V 500MA MBS
auf Bestellung 300000 Stücke:
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12000+0.21 EUR
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MBR20100CT MDD MBR20100CT%20N0623%20REV.A.pdf MBR2035CT SERIES_M2104.pdf mbr20100ct.pdf MBR20100CT-MBRF20100CT.pdf 5272_MBR20100CT.pdf MBR20%2880%2C90%2C100%29CT.pdf Диод SCHOTTKY, 20A, 100V, TO-220AB Діоди та діодні збірки
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MBR30100CT MDD MBR30100CT(-1)%20MBRB30100CT%20N0039%20REV.C.pdf mbr30100ct.pdf MBR3035CT SERIES_K2104.pdf DIODE ARRAY SCHOTTKY 100V TO220 Діоди та діодні збірки
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MBR3045CT MDD MBR3035-45CT(-1)%20MBRB3035-45CT%20N0013%20REV.A.pdf MBR3045CT-MBRF3045CT.pdf MBR3035CT SERIES_K2104.pdf MBR30%2835%2C45%29CT%28PBF%2CN3%29.pdf Сдвоенный Schottky ОК, 20A, 45V, TO-220AB Діоди та діодні збірки
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MBRF20100CT MBRF20100CT MDD TO220ABMBRF100.pdf description Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Box
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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MBRF20200CT MBRF20200CT MDD TO220ABMBRF200.pdf Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Box
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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MDD15N10D MDD15N10D MDD MDD15N10D000SD.pdf Description: MOSFET N 100V 15A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V
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MDD2302 MDD MDD2302000S0S2.pdf N-Channel 20 V 4A 1.25W (Ta) Surface Mount SOT-23 Транзистори
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MDD2N60D MDD2N60D MDD MDD2N60D0000SD.pdf Description: MOSFET N 600V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 35W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 25 V
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MDD2N65D MDD2N65D MDD MDD2N65D0000SD.pdf?rlkey=5jq1hawi7lpp1rhtxhljgfwp0&st=u2gsyerz&dl=0 Description: MOSFET N 650V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 5.2Ohm @ 1A, 10V
Power Dissipation (Max): 35W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 25 V
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MDD3400A MDD MDD3400A00S0R0.pdf MOSFET N-CH 30V 4.2A SOT-23 Транзистори
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MDD4N65D MDD4N65D MDD MDD4N65D0000SD.pdf Description: MOSFET N 650V 4A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 77W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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MDD50N03D MDD50N03D MDD MDD50N03D000SD.pdf Description: MOSFET N 30V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
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MDD50N06D MDD50N06D MDD MDD50N06D000SD.pdf Description: MOSFET N 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 30 V
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MDD60N04D MDD60N04D MDD MDD60N04D000SD.pdf Description: MOSFET N 40V 60A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
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MDD7N65D MDD7N65D MDD MDD7N65D0000SD.pdf Description: MOSFET N 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
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MDD80N03D MDD80N03D MDD MDD80N03D000SD.pdf Description: MOSFET N 30V 80A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 44W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
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MDDG10R08D MDDG10R08D MDD MDDG10R08D00SD.pdf?rlkey=kml29wk2pvm4sxspi3t9ntag2&st=7dqf98xo&dl=0 Description: MOSFET N 100V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
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MMBT2222A MMBT2222A MDD MMBT2222AS2S1P.pdf Description: TRANS NPN 40V 0.6A SOT-23
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MMBT2907A MMBT2907A MDD MMBT2907AS2S2F.pdf Description: TRANS PNP 60V 0.6A SOT-23
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MMBT3906 MMBT3906 MDD MMBT3906S20S2A.pdf?rlkey=zs9eez4hquwuqg3o6o1nj9ibe&st=zbbv6lrt&dl=1 Description: TRANS PNP 40V 0.2A SOT-23
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mmbt4401 mmbt4401 MDD MMBT4401S20S2X.pdf?rlkey=qzcl3le0d9xtga8wl02svgtwb&st=1eqyl38n&dl=1 Description: TRANS NPN 40V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 0.1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
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MMBT4403 MMBT4403 MDD MMBT4403S20S2T.pdf?rlkey=bac43pynjyjh9970dmmwr32m2&st=xqw6d83t&dl=1 Description: TRANS PNP 40V 0.6A SOT-23
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GBLC15C SOD323LC15CSEC.pdf
GBLC15C
Hersteller: MDD
Description: TVS DIODE15VWM 24VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Power - Peak Pulse: 300W
Power Line Protection: Yes
Part Status: Active
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GBLC24C SOD323LC24CSHC.pdf
GBLC24C
Hersteller: MDD
Description: TVS DIODE 24VWM SOD323
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.8pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: Yes
Power - Peak Pulse: 300W
Voltage - Breakdown (Min): 26.7V
Bidirectional Channels: 1
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GBU1008 GBU100800L1080.pdf
GBU1008
Hersteller: MDD
Description: BRIDGE RECT 1P 800V 416MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 416 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBU1010 GBU1010.pdf
GBU1010
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GBU1010 GBU10005-GBU1010%20N1770%20REV.A.pdf GBU1010.pdf ds30052.pdf GBU10xx.pdf 5272_GBU1010.pdf 1736907114570365.pdf
Hersteller: MDD
10A, 1000V (аналог GBU10M) Діодні мости малопотужні
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GBU406 description GBU0406000L460.pdf
GBU406
Hersteller: MDD
Description: BRIDGE RECT 1P 600V 166MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 166 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1000+1.73 EUR
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GBU410 GBU0410000L40A.pdf
GBU410
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 166MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 166 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBU610 GBU0610000L60A.pdf
GBU610
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 250MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 250 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBU806 GBU8060000L860.pdf
GBU806
Hersteller: MDD
Description: BRIDGE RECT 1P 600V 333MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 333 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBU808 GBU0808000L880.pdf
GBU808
Hersteller: MDD
Description: BRIDGE RECT 1P 800V 333MA GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 333 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+1.73 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GBU810 GBU8005-GBU810%20N1809%20REV.A.pdf
Hersteller: MDD
RECT BRIDGE GPP 8A 1000V GBU Діодні мости малопотужні
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU810 L GBU8100000L80A.pdf
GBU810 L
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+2.46 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HER108-T/B HER108-T_B.pdf
HER108-T/B
Hersteller: MDD
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.25 EUR
Mindestbestellmenge: 5000 Stücke
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KBL406 description KBL4060000L460.pdf
KBL406
Hersteller: MDD
Description: BRIDGE RECT 1P 600V 166MA KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 166 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.01 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
KBL410 KBL4100000L40A.pdf
KBL410
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 166MA KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 166 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1000000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2 EUR
Mindestbestellmenge: 1000 Stücke
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KBL608 KBL6080000L680.pdf
KBL608
Hersteller: MDD
Description: BRIDGE RECT 1P 800V 250MA KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 250 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+2.38 EUR
Mindestbestellmenge: 500 Stücke
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KBL610 KBL6100000L60A.pdf
KBL610
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 250MA KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 250 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+2.4 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
KBP210 KBP210.pdf
KBP210
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.24 EUR
Mindestbestellmenge: 2000 Stücke
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KBP210 KBP210.pdf 5272_KBP210.pdf
Hersteller: MDD
BRIDGE RECT 1kV 2A KBP Діодні мости малопотужні
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBP210 L KBP2100000L20A.pdf
KBP210 L
Hersteller: MDD
Description: BRIDGE RECTIFIER KBP 1KV 2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBP307 L KBP3070000L360.pdf
KBP307 L
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 600V 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 244735 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
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KBP310 L KBP3100000L30A.pdf
KBP310 L
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 188500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
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KBPC3510 description KBPC3510.pdf
KBPC3510
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 35A KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
400+10.57 EUR
Mindestbestellmenge: 400 Stücke
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KBPC3510 description KBPC3510.pdf KBPC3510.pdf?rlkey=igybglwoa5z05kr86n896snem&st=6nfmif4u&dl=0
Hersteller: MDD
Io=35A, Vdc=1000V Діодні мости малопотужні
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC5010 description KBPC50100L500A.pdf
KBPC5010
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 50A KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
400+8.77 EUR
Mindestbestellmenge: 400 Stücke
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KBPC5010 description KBPC50100L500A.pdf KBPC5010.pdf?rlkey=yg1yo2me3dvfnfkezxyu2hhum&st=651c89kk&dl=0
Hersteller: MDD
50A, 1000V, корпус MB-25 Діодні мости малопотужні
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC610 KBPC610000L60A.pdf
KBPC610
Hersteller: MDD
Description: BRIDGE RECT 1P 1KV 250MA KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 250 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
600+4.57 EUR
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
KBU1010 KBU101000L100A.pdf
KBU1010
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 416MA KBU
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 416 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
400+3.01 EUR
Mindestbestellmenge: 400 Stücke
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KBU1510 KBU151000L150A.pdf
KBU1510
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 15A KBU
Packaging: Box
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
400+2.56 EUR
Mindestbestellmenge: 400 Stücke
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KBU2510 KBU251000L250A.pdf
KBU2510
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 25A KBU
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
400+3.77 EUR
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
KBU810 KBU8100000L80A.pdf
KBU810
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 333MA KBU
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 333 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 7600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
400+2.67 EUR
Mindestbestellmenge: 400 Stücke
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KMB14F MBFKMB14FS1004.pdf
KMB14F
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 40V 1A KMB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 1250°C (TJ)
Technology: Standard
Supplier Device Package: MBF
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 mA @ 40 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.2 EUR
Mindestbestellmenge: 10000 Stücke
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KMB16F MBFKMB16FS1006.pdf
KMB16F
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 60V 1A KMB
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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LL4148 LL4148.pdf
LL4148
Hersteller: MDD
Description: DIODE STANDARD 75V 200MA LL34
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.23 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
M4 SMAM400000S140.pdf
M4
Hersteller: MDD
Description: DIODE STANDARD 400V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-214AC, SMA
Mounting Type: Surface Mount
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.13 EUR
Mindestbestellmenge: 10000 Stücke
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MB10F MB10F.pdf
MB10F
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 1KV 1A MBF
auf Bestellung 1490000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.21 EUR
Mindestbestellmenge: 10000 Stücke
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MB110S MBSMB110S0S110.pdf
MB110S
Hersteller: MDD
Description: BRIDGE RECT 1PHASE 100V 1A MBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MBS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.44 EUR
Mindestbestellmenge: 3000 Stücke
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MB6S MBSMB6S000S160.pdf
MB6S
Hersteller: MDD
Description: BRIDGE RECT 1P 600V 500MA MBS
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12000+0.21 EUR
Mindestbestellmenge: 12000 Stücke
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MBR20100CT MBR20100CT%20N0623%20REV.A.pdf MBR2035CT SERIES_M2104.pdf mbr20100ct.pdf MBR20100CT-MBRF20100CT.pdf 5272_MBR20100CT.pdf MBR20%2880%2C90%2C100%29CT.pdf
Hersteller: MDD
Диод SCHOTTKY, 20A, 100V, TO-220AB Діоди та діодні збірки
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR30100CT MBR30100CT(-1)%20MBRB30100CT%20N0039%20REV.C.pdf mbr30100ct.pdf MBR3035CT SERIES_K2104.pdf
Hersteller: MDD
DIODE ARRAY SCHOTTKY 100V TO220 Діоди та діодні збірки
Produkt ist nicht verfügbar
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MBR3045CT MBR3035-45CT(-1)%20MBRB3035-45CT%20N0013%20REV.A.pdf MBR3045CT-MBRF3045CT.pdf MBR3035CT SERIES_K2104.pdf MBR30%2835%2C45%29CT%28PBF%2CN3%29.pdf
Hersteller: MDD
Сдвоенный Schottky ОК, 20A, 45V, TO-220AB Діоди та діодні збірки
Produkt ist nicht verfügbar
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MBRF20100CT description TO220ABMBRF100.pdf
MBRF20100CT
Hersteller: MDD
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Box
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+2.45 EUR
Mindestbestellmenge: 500 Stücke
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MBRF20200CT TO220ABMBRF200.pdf
MBRF20200CT
Hersteller: MDD
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Box
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+2.44 EUR
Mindestbestellmenge: 500 Stücke
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MDD15N10D MDD15N10D000SD.pdf
MDD15N10D
Hersteller: MDD
Description: MOSFET N 100V 15A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.7 EUR
Mindestbestellmenge: 2500 Stücke
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MDD2302 MDD2302000S0S2.pdf
Hersteller: MDD
N-Channel 20 V 4A 1.25W (Ta) Surface Mount SOT-23 Транзистори
Produkt ist nicht verfügbar
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MDD2N60D MDD2N60D0000SD.pdf
MDD2N60D
Hersteller: MDD
Description: MOSFET N 600V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 35W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 25 V
auf Bestellung 7688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.84 EUR
Mindestbestellmenge: 2500 Stücke
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MDD2N65D MDD2N65D0000SD.pdf?rlkey=5jq1hawi7lpp1rhtxhljgfwp0&st=u2gsyerz&dl=0
MDD2N65D
Hersteller: MDD
Description: MOSFET N 650V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 5.2Ohm @ 1A, 10V
Power Dissipation (Max): 35W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 25 V
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.82 EUR
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MDD3400A MDD3400A00S0R0.pdf
Hersteller: MDD
MOSFET N-CH 30V 4.2A SOT-23 Транзистори
Produkt ist nicht verfügbar
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MDD4N65D MDD4N65D0000SD.pdf
MDD4N65D
Hersteller: MDD
Description: MOSFET N 650V 4A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 77W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 33669 Stücke:
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AnzahlPrivatkunde
2500+1.55 EUR
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MDD50N03D MDD50N03D000SD.pdf
MDD50N03D
Hersteller: MDD
Description: MOSFET N 30V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
auf Bestellung 640000 Stücke:
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2500+0.71 EUR
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MDD50N06D MDD50N06D000SD.pdf
MDD50N06D
Hersteller: MDD
Description: MOSFET N 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 30 V
auf Bestellung 97500 Stücke:
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AnzahlPrivatkunde
2500+1.05 EUR
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MDD60N04D MDD60N04D000SD.pdf
MDD60N04D
Hersteller: MDD
Description: MOSFET N 40V 60A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.88 EUR
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MDD7N65D MDD7N65D0000SD.pdf
MDD7N65D
Hersteller: MDD
Description: MOSFET N 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
auf Bestellung 73876 Stücke:
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AnzahlPrivatkunde
2500+2.46 EUR
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MDD80N03D MDD80N03D000SD.pdf
MDD80N03D
Hersteller: MDD
Description: MOSFET N 30V 80A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 44W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.83 EUR
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MDDG10R08D MDDG10R08D00SD.pdf?rlkey=kml29wk2pvm4sxspi3t9ntag2&st=7dqf98xo&dl=0
MDDG10R08D
Hersteller: MDD
Description: MOSFET N 100V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+2.8 EUR
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MMBT2222A MMBT2222AS2S1P.pdf
MMBT2222A
Hersteller: MDD
Description: TRANS NPN 40V 0.6A SOT-23
auf Bestellung 78000 Stücke:
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12000+0.15 EUR
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MMBT2907A MMBT2907AS2S2F.pdf
MMBT2907A
Hersteller: MDD
Description: TRANS PNP 60V 0.6A SOT-23
auf Bestellung 12000 Stücke:
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AnzahlPrivatkunde
6000+0.25 EUR
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MMBT3906 MMBT3906S20S2A.pdf?rlkey=zs9eez4hquwuqg3o6o1nj9ibe&st=zbbv6lrt&dl=1
MMBT3906
Hersteller: MDD
Description: TRANS PNP 40V 0.2A SOT-23
auf Bestellung 24000 Stücke:
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12000+0.15 EUR
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mmbt4401 MMBT4401S20S2X.pdf?rlkey=qzcl3le0d9xtga8wl02svgtwb&st=1eqyl38n&dl=1
mmbt4401
Hersteller: MDD
Description: TRANS NPN 40V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 0.1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 33000 Stücke:
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12000+0.14 EUR
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MMBT4403 MMBT4403S20S2T.pdf?rlkey=bac43pynjyjh9970dmmwr32m2&st=xqw6d83t&dl=1
MMBT4403
Hersteller: MDD
Description: TRANS PNP 40V 0.6A SOT-23
auf Bestellung 12000 Stücke:
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AnzahlPrivatkunde
12000+0.14 EUR
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