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1N5251B-TP 1N5251B-TP Micro Commercial Co 1N5221B-1N5267B(DO-35).pdf Description: DIODE ZENER 22V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Produkt ist nicht verfügbar
1N5252B-TP 1N5252B-TP Micro Commercial Co 1N5221B-1N5267B(DO-35).pdf Description: DIODE ZENER 24V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Produkt ist nicht verfügbar
1N5254B-TP 1N5254B-TP Micro Commercial Co 1N5221B-1N5267B%28DO-35%29.pdf Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
1N5255B-TP 1N5255B-TP Micro Commercial Co 1N5221B-1N5267B(DO-35).pdf Description: DIODE ZENER 28V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
1N5256B-TP 1N5256B-TP Micro Commercial Co 1N5221B-1N5267B%28DO-35%29.pdf Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
1N5257B-TP 1N5257B-TP Micro Commercial Co 1N5221B-1N5267B(DO-35).pdf Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
1N5258B-TP 1N5258B-TP Micro Commercial Co 1N5221B-1N5267B(DO-35).pdf Description: DIODE ZENER 36V 500MW DO35
Produkt ist nicht verfügbar
1N5261B-TP 1N5261B-TP Micro Commercial Co 1N5221B-1N5267B(DO-35).pdf Description: DIODE ZENER 47V 500MW DO35
Produkt ist nicht verfügbar
1N5262B-TP 1N5262B-TP Micro Commercial Co 1N5221B-1N5267B(DO-35).pdf Description: DIODE ZENER 51V 500MW DO35
Produkt ist nicht verfügbar
1N5263B-TP 1N5263B-TP Micro Commercial Co 1N5221-1N5267(DO-35).pdf Description: DIODE ZENER 56V 500MW DO35
Produkt ist nicht verfügbar
1N5264B-TP 1N5264B-TP Micro Commercial Co 1N5221B-1N5267B(DO-35).pdf Description: DIODE ZENER 60V 500MW DO35
Produkt ist nicht verfügbar
1N5265B-TP 1N5265B-TP Micro Commercial Co 1N5221-1N5267(DO-35).pdf Description: DIODE ZENER 62V 500MW DO35
Produkt ist nicht verfügbar
1N5266B-TP 1N5266B-TP Micro Commercial Co 1N5221-1N5267(DO-35).pdf Description: DIODE ZENER 68V 500MW DO35
Produkt ist nicht verfügbar
1N5400-TP 1N5400-TP Micro Commercial Co 1N5400-1N5408%28DO-201AD%29.pdf Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
1N5401-TP 1N5401-TP Micro Commercial Co 1N5400-1N5408%28DO-201AD%29.pdf Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
1N5402-TP 1N5402-TP Micro Commercial Co 1N5400-1N5408%28DO-201AD%29.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
1N5404-TP 1N5404-TP Micro Commercial Co 1N5400-1N5408%28DO-201AD%29.pdf Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
1N5406-TP 1N5406-TP Micro Commercial Co 1N5400-1N5408%28DO-201AD%29.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
1N5407-TP 1N5407-TP Micro Commercial Co 1N5400-1N5408%28DO-201AD%29.pdf Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
1N5408-TP 1N5408-TP Micro Commercial Co 1N5400-1N5408%28DO-201AD%29.pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
1N5817-TP 1N5817-TP Micro Commercial Co 1N5817-1N5819(DO-41).pdf Description: DIODE SCHOTTKY 20V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 33530 Stücke:
Lieferzeit 21-28 Tag (e)
35+0.75 EUR
52+ 0.5 EUR
106+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 35
1N5818-TP 1N5818-TP Micro Commercial Co 1N5817-1N5819(DO-41).pdf Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 10304 Stücke:
Lieferzeit 21-28 Tag (e)
35+0.75 EUR
52+ 0.5 EUR
106+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 35
1N5819-TP 1N5819-TP Micro Commercial Co 1N5817-1N5819(DO-41).pdf Description: DIODE SCHOTTKY 40V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
auf Bestellung 28266 Stücke:
Lieferzeit 21-28 Tag (e)
35+0.75 EUR
52+ 0.5 EUR
106+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 35
1N914-TP 1N914-TP Micro Commercial Co 1N914A_B(DO-35).pdf Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
1N914B-TP 1N914B-TP Micro Commercial Co 1N914A_B(DO-35).pdf Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
2N3904-AP 2N3904-AP Micro Commercial Co 2N3904(TO-92).pdf Description: TRANS NPN 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 1185 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
2N3906-AP 2N3906-AP Micro Commercial Co 2N3906(TO-92).pdf Description: TRANS PNP 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
2N4401-AP 2N4401-AP Micro Commercial Co 2N4401(TO-92).pdf Description: TRANS NPN 40V TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
auf Bestellung 1121 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
2N4403-AP 2N4403-AP Micro Commercial Co 2N4403(TO-92).pdf Description: TRANS PNP 40V TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
auf Bestellung 119 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
Mindestbestellmenge: 25
EGP10A-TP EGP10A-TP Micro Commercial Co EGP10A-EGP10K(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Produkt ist nicht verfügbar
EGP10B-TP EGP10B-TP Micro Commercial Co EGP10A-EGP10K(DO-41).pdf Description: DIODE GEN PURP 100V 1A DO41
Produkt ist nicht verfügbar
EGP10D-TP EGP10D-TP Micro Commercial Co EGP10A-EGP10K(DO-41).pdf Description: DIODE GEN PURP 200V 1A DO41
Produkt ist nicht verfügbar
EGP10F-TP EGP10F-TP Micro Commercial Co EGP10A-EGP10K(DO-41).pdf Description: DIODE GEN PURP 300V 1A DO41
Produkt ist nicht verfügbar
EGP10G-TP EGP10G-TP Micro Commercial Co DS_353_EGP10A-EGP10K(DO-41).pdf Description: DIODE GEN PURP 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
EGP20A-TP EGP20A-TP Micro Commercial Co EGP20A-EGP20K(DO-15).pdf Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
EGP20B-TP EGP20B-TP Micro Commercial Co EGP20A-EGP20K(DO-15).pdf Description: DIODE GEN PURP 100V 2A DO15
Produkt ist nicht verfügbar
EGP20D-TP EGP20D-TP Micro Commercial Co EGP20A-EGP20K(DO-15).pdf Description: DIODE GEN PURP 200V 2A DO15
Produkt ist nicht verfügbar
EGP20F-TP EGP20F-TP Micro Commercial Co EGP20A-EGP20K(DO-15).pdf Description: DIODE GEN PURP 300V 2A DO15
Produkt ist nicht verfügbar
EGP20G-TP EGP20G-TP Micro Commercial Co DS_353_EGP20A-EGP20K(DO-15).pdf Description: DIODE GEN PURP 400V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
EGP30A-TP Micro Commercial Co EGP30A-EGP30K(D0-201AD).pdf Description: DIODE GEN PURP 50V 3A DO201AE
Produkt ist nicht verfügbar
EGP30B-TP Micro Commercial Co EGP30A-EGP30K(D0-201AD).pdf Description: DIODE GEN PURP 100V 3A DO201AE
Produkt ist nicht verfügbar
EGP30D-TP Micro Commercial Co EGP30A-EGP30K(D0-201AD).pdf Description: DIODE GEN PURP 200V 3A DO201AE
Produkt ist nicht verfügbar
EGP30F-TP Micro Commercial Co EGP30A-EGP30K(D0-201AD).pdf Description: DIODE GEN PURP 300V 3A DO201AE
Produkt ist nicht verfügbar
EGP30G-TP Micro Commercial Co DS_353_EGP30A-EGP30K(D0-201AD).pdf Description: DIODE GEN PURP 400V 3A DO201AE
Packaging: Cut Tape (CT)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
ES1A-TP ES1A-TP Micro Commercial Co ES1A-ES1M_RevC_6-5-18.pdf Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
ES1B-TP ES1B-TP Micro Commercial Co ES1A-ES1M_RevC_6-5-18.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
ES1D-TP ES1D-TP Micro Commercial Co ES1A-ES1M_RevC_6-5-18.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1G-TP ES1G-TP Micro Commercial Co ES1A-ES1M(HSMA).pdf Description: DIODE GEN PURP 400V 1A DO214AC
Produkt ist nicht verfügbar
ES1J-TP ES1J-TP Micro Commercial Co ES1A-ES1M_RevC_6-5-18.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1K-TP ES1K-TP Micro Commercial Co ES1A-ES1M_RevC_6-5-18.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
ES1M-TP ES1M-TP Micro Commercial Co ES1A-ES1M_RevC_6-5-18.pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS1A-TP GS1A-TP Micro Commercial Co GS1A-GS1M(HSMA)_Nov2011.pdf Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)
GS1B-TP GS1B-TP Micro Commercial Co GS1A-GS1M(HSMA).pdf Description: DIODE GEN PURP 100V 1A DO214AC
Produkt ist nicht verfügbar
GS1D-TP GS1D-TP Micro Commercial Co GS1A-GS1M(HSMA).pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
GS1G-TP GS1G-TP Micro Commercial Co GS1A-GS1M(HSMA).pdf Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
GS1J-TP GS1J-TP Micro Commercial Co GS1A-GS1M(HSMA).pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
GS1K-TP GS1K-TP Micro Commercial Co GS1A-GS1M(HSMA).pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
GS1M-TP GS1M-TP Micro Commercial Co GS1A-GS1M(HSMA).pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
PN2907A-AP PN2907A-AP Micro Commercial Co PN2907A%28TO-92%29-V2.pdf Description: TRANS PNP 60V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
1N4728A-TP 1N4728A-TP Micro Commercial Co 1N4728-1N4761_Rev_A.pdf Description: DIODE ZENER 3.3V 1W DO41G
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41G
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
1N5251B-TP 1N5221B-1N5267B(DO-35).pdf
1N5251B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 22V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Produkt ist nicht verfügbar
1N5252B-TP 1N5221B-1N5267B(DO-35).pdf
1N5252B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 24V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Produkt ist nicht verfügbar
1N5254B-TP 1N5221B-1N5267B%28DO-35%29.pdf
1N5254B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
1N5255B-TP 1N5221B-1N5267B(DO-35).pdf
1N5255B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 28V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
1N5256B-TP 1N5221B-1N5267B%28DO-35%29.pdf
1N5256B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
1N5257B-TP 1N5221B-1N5267B(DO-35).pdf
1N5257B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
1N5258B-TP 1N5221B-1N5267B(DO-35).pdf
1N5258B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 36V 500MW DO35
Produkt ist nicht verfügbar
1N5261B-TP 1N5221B-1N5267B(DO-35).pdf
1N5261B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 47V 500MW DO35
Produkt ist nicht verfügbar
1N5262B-TP 1N5221B-1N5267B(DO-35).pdf
1N5262B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 51V 500MW DO35
Produkt ist nicht verfügbar
1N5263B-TP 1N5221-1N5267(DO-35).pdf
1N5263B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 56V 500MW DO35
Produkt ist nicht verfügbar
1N5264B-TP 1N5221B-1N5267B(DO-35).pdf
1N5264B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 60V 500MW DO35
Produkt ist nicht verfügbar
1N5265B-TP 1N5221-1N5267(DO-35).pdf
1N5265B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 62V 500MW DO35
Produkt ist nicht verfügbar
1N5266B-TP 1N5221-1N5267(DO-35).pdf
1N5266B-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 68V 500MW DO35
Produkt ist nicht verfügbar
1N5400-TP 1N5400-1N5408%28DO-201AD%29.pdf
1N5400-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
1N5401-TP 1N5400-1N5408%28DO-201AD%29.pdf
1N5401-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
1N5402-TP 1N5400-1N5408%28DO-201AD%29.pdf
1N5402-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
1N5404-TP 1N5400-1N5408%28DO-201AD%29.pdf
1N5404-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
1N5406-TP 1N5400-1N5408%28DO-201AD%29.pdf
1N5406-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
1N5407-TP 1N5400-1N5408%28DO-201AD%29.pdf
1N5407-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
1N5408-TP 1N5400-1N5408%28DO-201AD%29.pdf
1N5408-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
1N5817-TP 1N5817-1N5819(DO-41).pdf
1N5817-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 20V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 33530 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
35+0.75 EUR
52+ 0.5 EUR
106+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 35
1N5818-TP 1N5817-1N5819(DO-41).pdf
1N5818-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 10304 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
35+0.75 EUR
52+ 0.5 EUR
106+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 35
1N5819-TP 1N5817-1N5819(DO-41).pdf
1N5819-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
auf Bestellung 28266 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
35+0.75 EUR
52+ 0.5 EUR
106+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 35
1N914-TP 1N914A_B(DO-35).pdf
1N914-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
1N914B-TP 1N914A_B(DO-35).pdf
1N914B-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
2N3904-AP 2N3904(TO-92).pdf
2N3904-AP
Hersteller: Micro Commercial Co
Description: TRANS NPN 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 1185 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
2N3906-AP 2N3906(TO-92).pdf
2N3906-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
2N4401-AP 2N4401(TO-92).pdf
2N4401-AP
Hersteller: Micro Commercial Co
Description: TRANS NPN 40V TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
auf Bestellung 1121 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
2N4403-AP 2N4403(TO-92).pdf
2N4403-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 40V TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
auf Bestellung 119 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
Mindestbestellmenge: 25
EGP10A-TP EGP10A-EGP10K(DO-41).pdf
EGP10A-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Produkt ist nicht verfügbar
EGP10B-TP EGP10A-EGP10K(DO-41).pdf
EGP10B-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 1A DO41
Produkt ist nicht verfügbar
EGP10D-TP EGP10A-EGP10K(DO-41).pdf
EGP10D-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Produkt ist nicht verfügbar
EGP10F-TP EGP10A-EGP10K(DO-41).pdf
EGP10F-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 300V 1A DO41
Produkt ist nicht verfügbar
EGP10G-TP DS_353_EGP10A-EGP10K(DO-41).pdf
EGP10G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
EGP20A-TP EGP20A-EGP20K(DO-15).pdf
EGP20A-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 2A DO15
Produkt ist nicht verfügbar
EGP20B-TP EGP20A-EGP20K(DO-15).pdf
EGP20B-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 2A DO15
Produkt ist nicht verfügbar
EGP20D-TP EGP20A-EGP20K(DO-15).pdf
EGP20D-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 2A DO15
Produkt ist nicht verfügbar
EGP20F-TP EGP20A-EGP20K(DO-15).pdf
EGP20F-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 300V 2A DO15
Produkt ist nicht verfügbar
EGP20G-TP DS_353_EGP20A-EGP20K(DO-15).pdf
EGP20G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
EGP30A-TP EGP30A-EGP30K(D0-201AD).pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 3A DO201AE
Produkt ist nicht verfügbar
EGP30B-TP EGP30A-EGP30K(D0-201AD).pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 3A DO201AE
Produkt ist nicht verfügbar
EGP30D-TP EGP30A-EGP30K(D0-201AD).pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 3A DO201AE
Produkt ist nicht verfügbar
EGP30F-TP EGP30A-EGP30K(D0-201AD).pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 300V 3A DO201AE
Produkt ist nicht verfügbar
EGP30G-TP DS_353_EGP30A-EGP30K(D0-201AD).pdf
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 3A DO201AE
Packaging: Cut Tape (CT)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
ES1A-TP ES1A-ES1M_RevC_6-5-18.pdf
ES1A-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
ES1B-TP ES1A-ES1M_RevC_6-5-18.pdf
ES1B-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
ES1D-TP ES1A-ES1M_RevC_6-5-18.pdf
ES1D-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
ES1G-TP ES1A-ES1M(HSMA).pdf
ES1G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A DO214AC
Produkt ist nicht verfügbar
ES1J-TP ES1A-ES1M_RevC_6-5-18.pdf
ES1J-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ES1K-TP ES1A-ES1M_RevC_6-5-18.pdf
ES1K-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
ES1M-TP ES1A-ES1M_RevC_6-5-18.pdf
ES1M-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GS1A-TP GS1A-GS1M(HSMA)_Nov2011.pdf
GS1A-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)
GS1B-TP GS1A-GS1M(HSMA).pdf
GS1B-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 1A DO214AC
Produkt ist nicht verfügbar
GS1D-TP GS1A-GS1M(HSMA).pdf
GS1D-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
GS1G-TP GS1A-GS1M(HSMA).pdf
GS1G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
GS1J-TP GS1A-GS1M(HSMA).pdf
GS1J-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
GS1K-TP GS1A-GS1M(HSMA).pdf
GS1K-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
GS1M-TP GS1A-GS1M(HSMA).pdf
GS1M-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
PN2907A-AP PN2907A%28TO-92%29-V2.pdf
PN2907A-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 60V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
1N4728A-TP 1N4728-1N4761_Rev_A.pdf
1N4728A-TP
Hersteller: Micro Commercial Co
Description: DIODE ZENER 3.3V 1W DO41G
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41G
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
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