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MSCSM120SKM11CT3AG Microchip Technology Description: MOSFET IPM 1.2KV 254A MODULE
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Part Status: Active
Current: 254 A
Voltage: 1.2 kV
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MSCSM120DAM11CT3AG MSCSM120DAM11CT3AG Microchip Technology 1244786-mscsm120dam11ct3ag-datasheet Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Current: 254 A
Voltage: 1.2 kV
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MSCSM70HM19CT3AG MSCSM70HM19CT3AG Microchip Technology 1244936-mscsm70hm19ct3ag-datasheet Description: MOSFET 4N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
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MSCSM70AM10CT3AG MSCSM70AM10CT3AG Microchip Technology 1244934-mscsm70am10ct3ag-datasheet Description: MOSFET 2N-CH 700V 241A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120HM31CT3AG MSCSM120HM31CT3AG Microchip Technology Description: SIC 4N-CH 1200V 89A SP3F
Part Status: Active
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
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MSCSM70VM10C4AG MSCSM70VM10C4AG Microchip Technology 1244940-mscsm70vm10c4ag-datasheet Description: PM-MOSFET-SIC-SBD~-SP4
Part Status: Active
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 674W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Package / Case: Module
Packaging: Tube
Mounting Type: Chassis Mount
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MSCSM70TAM19CT3AG MSCSM70TAM19CT3AG Microchip Technology 1244939-mscsm70tam19ct3ag-datasheet Description: MOSFET 6N-CH 700V 124A SP3F
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 365W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
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MSCSM70AM07CT3AG MSCSM70AM07CT3AG Microchip Technology 1244933-mscsm70am07ct3ag-datasheet Description: MOSFET 2N-CH 700V 353A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Supplier Device Package: SP3F
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MSCSM120TAM31CT3AG MSCSM120TAM31CT3AG Microchip Technology 1244794-mscsm120tam31ct3ag-datasheet Description: SIC 6N-CH 1200V 89A SP3F
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
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MSCSM120AM11CT3AG MSCSM120AM11CT3AG Microchip Technology 1244778-mscsm120am11ct3ag-datasheet Description: SIC 2N-CH 1200V 254A SP3F
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1.067kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
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MSCSM120AM08CT3AG Microchip Technology Description: MOSFET 2N-CH 1200V 337A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1409W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120HM16CT3AG MSCSM120HM16CT3AG Microchip Technology 1244787-mscsm120hm16ct3ag-datasheet Description: SIC 4N-CH 1200V 173A SP3F
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 745W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
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MSCSM70TAM10CTPAG MSCSM70TAM10CTPAG Microchip Technology 1244938-mscsm70tam10ctpag-datasheet Description: PM-MOSFET-SIC-SBD~-SP6P
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MSCSM70AM025CT6AG MSCSM70AM025CT6AG Microchip Technology 00003052C.pdf Description: PM-MOSFET-SIC-SBD~-SP6C
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MSCSM120TAM16CTPAG Microchip Technology Description: MOSFET 6N-CH 1200V 171A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 728W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP6-P
Part Status: Active
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MSCSM120AM042CT6AG MSCSM120AM042CT6AG Microchip Technology 1244784-mscsm120am042ct6ag-datasheet Description: SIC 2N-CH 1200V 495A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C
Part Status: Active
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MSCSM70TAM05TPAG MSCSM70TAM05TPAG Microchip Technology 1244937-mscsm70tam05tpag-datasheet Description: PM-MOSFET-SIC~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Part Status: Active
Current: 273 A
Voltage: 700 V
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MSCSM70AM025CD3AG Microchip Technology 00003052C.pdf Description: SIC 700V 538A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Supplier Device Package: D3
Part Status: Active
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MSCSM70AM025CT6LIAG MSCSM70AM025CT6LIAG Microchip Technology MSCSM70AM025CT6LIAG_Preliminary_Apr2020.pdf Description: PM-MOSFET-SIC-SBD~-SP6C LI
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MSCSM120AM042CT6LIAG Microchip Technology Description: MOSFET 2N-CH 1200V 495A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2031W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C LI
Part Status: Active
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MSCSM120AM042CD3AG MSCSM120AM042CD3AG Microchip Technology Microsemi_MSCSM120AM042CD3AG_Phase_Leg_SiC_MOSFET.pdf Description: MOSFET 2N-CH 1200V 495A D3
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2031W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
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MSCSM120TAM11CTPAG MSCSM120TAM11CTPAG Microchip Technology 1244791-mscsm120tam11ctpag-datasheet Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
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MSCSM120AM027CT6AG MSCSM120AM027CT6AG Microchip Technology 1244781-mscsm120am027ct6ag-datasheet Description: SIC 2N-CH 1200V 733A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: SP6C
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MSCSM120AM027CD3AG MSCSM120AM027CD3AG Microchip Technology 1244780-mscsm120am027cd3ag-datasheet Description: SIC 2N-CH 1200V 733A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: D3
Part Status: Active
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MSCSM120AM02CT6LIAG MSCSM120AM02CT6LIAG Microchip Technology 1244801-mscsm120am02ct6liag-datasheet Description: MOSFET 2N-CH 1200V 947A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Supplier Device Package: SP6C LI
Part Status: Active
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1N938A 1N938A Microchip Technology 125410-lds-0155-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
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MART100KP300Ae3 MART100KP300Ae3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 300VWM 590VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 333V
Voltage - Clamping (Max) @ Ipp: 590V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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JAN1N823-1 JAN1N823-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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AT28HC256-70SU-T AT28HC256-70SU-T Microchip Technology Military-Grade-256-Kbit-High-Speed-Paged-Parallel-EEPROM-Data-Sheet-20006352A.pdf Description: IC EEPROM 256KBIT PAR 28SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ms
Supplier Device Package: 28-SOIC
Memory Format: EEPROM
Technology: EEPROM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TC)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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AT28HC256-70SU-T AT28HC256-70SU-T Microchip Technology Military-Grade-256-Kbit-High-Speed-Paged-Parallel-EEPROM-Data-Sheet-20006352A.pdf Description: IC EEPROM 256KBIT PAR 28SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ms
Supplier Device Package: 28-SOIC
Memory Format: EEPROM
Technology: EEPROM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TC)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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JANTXV2N5339U3 Microchip Technology Description: TRANS NPN 100V 5A U-3
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: U-3 (TO-276AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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AT27C080-12DC AT27C080-12DC Microchip Technology AT27C080%20%28Oct98%29.pdf Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-90DC AT27C080-90DC Microchip Technology AT27C080%20%28Oct98%29.pdf Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-12RC AT27C080-12RC Microchip Technology AT27C080%20%28Oct98%29.pdf Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-12RI AT27C080-12RI Microchip Technology AT27C080%20%28Oct98%29.pdf Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-15RC AT27C080-15RC Microchip Technology AT27C080%20(Oct98).pdf Description: IC EPROM 8M PARALLEL 32SOIC
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AT27C080-15RI AT27C080-15RI Microchip Technology AT27C080%20(Oct98).pdf Description: IC EPROM 8M PARALLEL 32SOIC
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AT27C080-90RC AT27C080-90RC Microchip Technology AT27C080%20%28Oct98%29.pdf Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-90RI AT27C080-90RI Microchip Technology AT27C080%20(Oct98).pdf Description: IC EPROM 8M PARALLEL 32SOIC
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ATMXT1664T3-C2U035 Microchip Technology mXT1664T3%20Touchscreen%20Controller%20Product%20Datasheet_40002054B.pdf Description: 1664 CHANNEL TOUCHSCREEN CONTROL
Current - Supply: 11.28 mA
Part Status: Active
Touchscreen: 2 Wire Capacitive
Voltage Reference: Internal
Supplier Device Package: 162-UFBGA (10x5)
Resolution (Bits): 12 b
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Interface: I2C, SPI, USB
Mounting Type: Surface Mount
Package / Case: 162-UFBGA
Packaging: Tray
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MIC2505YM-TR MIC2505YM-TR Microchip Technology MIC2505-6-Single-2A-Dual-1A-High-Side-Switches-DS20005579B.pdf Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 7.5V
Input Type: Non-Inverting
Rds On (Typ): 30mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
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ATSAML10E16A-AU ATSAML10E16A-AU Microchip Technology SAM-L10L11-Family-DataSheet-DS60001513F.pdf Description: IC MCU 32BIT 64KB FLASH 32TQFP
DigiKey Programmable: Not Verified
Number of I/O: 25
Part Status: Active
Supplier Device Package: 32-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 10x12b; D/A 1x10b
Core Processor: ARM® Cortex®-M23
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 32-TQFP
Packaging: Tray
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DSPIC33CH128MP202-I/SS DSPIC33CH128MP202-I/SS Microchip Technology dsPIC33CH128MP508-Family-Data-Sheet-DS70005319D.pdf Description: IC MCU 16BIT 152KB FLASH 28SSOP
DigiKey Programmable: Not Verified
Number of I/O: 21
Part Status: Active
Supplier Device Package: 28-SSOP
Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit Dual-Core
Data Converters: A/D 23x12b; D/A 4x12b
Core Processor: dsPIC
Program Memory Type: FLASH, PRAM
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 20K x 8
Program Memory Size: 152KB (152K x 8)
Speed: 180MHz, 200MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tube
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MSMCJ8.5A/TR Microchip Technology 10561-msmc-datasheet Description: TVS
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JAN1N5297UR-1 JAN1N5297UR-1 Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
Qualification: MIL-PRF-19500/463
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JANTXV1N5297UR-1 JANTXV1N5297UR-1 Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Discontinued at Digi-Key
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
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24FC16T-I/SN 24FC16T-I/SN Microchip Technology 20001703M.pdf Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
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24FC16T-I/SN 24FC16T-I/SN Microchip Technology 20001703M.pdf Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
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24FC16H-I/SN 24FC16H-I/SN Microchip Technology 20002118B.pdf Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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24FC16-I/SN 24FC16-I/SN Microchip Technology 20001703M.pdf Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
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24FC16T-I/MS 24FC16T-I/MS Microchip Technology 20001703M.pdf Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
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24FC16T-I/MS 24FC16T-I/MS Microchip Technology 20001703M.pdf Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
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24FC16-I/MS 24FC16-I/MS Microchip Technology 20001703M.pdf Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
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JAN2N7370 Microchip Technology 132544-lds-0208 Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
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JANTX2N7370 Microchip Technology 132544-lds-0208 Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
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JANTXV2N7370 Microchip Technology 132544-lds-0208 Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
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VCC1-1544-50M0000000 Microchip Technology VCC1154450M0000000.pdf Description: CUSTOM CMOS XO
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 20mA
Height - Seated (Max): 0.075" (1.90mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
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JAN1N4114-1 JAN1N4114-1 Microchip Technology 1N4614-1-1n4627e3+%2C1N4099-1_1N4135-1_e3.pdf Description: DIODE ZENER 20V DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.2 V
Qualification: MIL-PRF-19500/435
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ATSAME51G19A-MU-EFP ATSAME51G19A-MU-EFP Microchip Technology SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf Description: IC MCU 32BIT 512KB FLASH 48VQFN
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-VQFN (7x7)
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 192K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
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DSC6001HE2A-018.4320 DSC6001HE2A-018.4320 Microchip Technology DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf Description: MEMS OSC XO 18.4320MHZ CMOS SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VFLGA (1.6x1.2)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 18.432 MHz
Base Resonator: MEMS
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MSCSM120SKM11CT3AG
Hersteller: Microchip Technology
Description: MOSFET IPM 1.2KV 254A MODULE
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Part Status: Active
Current: 254 A
Voltage: 1.2 kV
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MSCSM120DAM11CT3AG 1244786-mscsm120dam11ct3ag-datasheet
MSCSM120DAM11CT3AG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Current: 254 A
Voltage: 1.2 kV
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MSCSM70HM19CT3AG 1244936-mscsm70hm19ct3ag-datasheet
MSCSM70HM19CT3AG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
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MSCSM70AM10CT3AG 1244934-mscsm70am10ct3ag-datasheet
MSCSM70AM10CT3AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 241A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120HM31CT3AG
MSCSM120HM31CT3AG
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 89A SP3F
Part Status: Active
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
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MSCSM70VM10C4AG 1244940-mscsm70vm10c4ag-datasheet
MSCSM70VM10C4AG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP4
Part Status: Active
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 674W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Package / Case: Module
Packaging: Tube
Mounting Type: Chassis Mount
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MSCSM70TAM19CT3AG 1244939-mscsm70tam19ct3ag-datasheet
MSCSM70TAM19CT3AG
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 700V 124A SP3F
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 365W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
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MSCSM70AM07CT3AG 1244933-mscsm70am07ct3ag-datasheet
MSCSM70AM07CT3AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 353A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Supplier Device Package: SP3F
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MSCSM120TAM31CT3AG 1244794-mscsm120tam31ct3ag-datasheet
MSCSM120TAM31CT3AG
Hersteller: Microchip Technology
Description: SIC 6N-CH 1200V 89A SP3F
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
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MSCSM120AM11CT3AG 1244778-mscsm120am11ct3ag-datasheet
MSCSM120AM11CT3AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 254A SP3F
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1.067kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Produkt ist nicht verfügbar
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MSCSM120AM08CT3AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 337A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1409W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120HM16CT3AG 1244787-mscsm120hm16ct3ag-datasheet
MSCSM120HM16CT3AG
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 173A SP3F
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 745W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Produkt ist nicht verfügbar
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MSCSM70TAM10CTPAG 1244938-mscsm70tam10ctpag-datasheet
MSCSM70TAM10CTPAG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6P
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MSCSM70AM025CT6AG 00003052C.pdf
MSCSM70AM025CT6AG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6C
Produkt ist nicht verfügbar
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MSCSM120TAM16CTPAG
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 1200V 171A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 728W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP6-P
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM120AM042CT6AG 1244784-mscsm120am042ct6ag-datasheet
MSCSM120AM042CT6AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 495A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70TAM05TPAG 1244937-mscsm70tam05tpag-datasheet
MSCSM70TAM05TPAG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Part Status: Active
Current: 273 A
Voltage: 700 V
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MSCSM70AM025CD3AG 00003052C.pdf
Hersteller: Microchip Technology
Description: SIC 700V 538A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Supplier Device Package: D3
Part Status: Active
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MSCSM70AM025CT6LIAG MSCSM70AM025CT6LIAG_Preliminary_Apr2020.pdf
MSCSM70AM025CT6LIAG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6C LI
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MSCSM120AM042CT6LIAG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2031W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C LI
Part Status: Active
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MSCSM120AM042CD3AG Microsemi_MSCSM120AM042CD3AG_Phase_Leg_SiC_MOSFET.pdf
MSCSM120AM042CD3AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A D3
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2031W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
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MSCSM120TAM11CTPAG 1244791-mscsm120tam11ctpag-datasheet
MSCSM120TAM11CTPAG
Hersteller: Microchip Technology
Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
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MSCSM120AM027CT6AG 1244781-mscsm120am027ct6ag-datasheet
MSCSM120AM027CT6AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 733A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: SP6C
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MSCSM120AM027CD3AG 1244780-mscsm120am027cd3ag-datasheet
MSCSM120AM027CD3AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 733A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: D3
Part Status: Active
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MSCSM120AM02CT6LIAG 1244801-mscsm120am02ct6liag-datasheet
MSCSM120AM02CT6LIAG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 947A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Supplier Device Package: SP6C LI
Part Status: Active
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1N938A 125410-lds-0155-datasheet
1N938A
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
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AnzahlPreis
2+15.96 EUR
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MART100KP300Ae3 77294-mrt100kp-pdf
MART100KP300Ae3
Hersteller: Microchip Technology
Description: TVS DIODE 300VWM 590VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 333V
Voltage - Clamping (Max) @ Ipp: 590V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JAN1N823-1 125462-lds-0220-datasheet
JAN1N823-1
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
Produkt ist nicht verfügbar
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AT28HC256-70SU-T Military-Grade-256-Kbit-High-Speed-Paged-Parallel-EEPROM-Data-Sheet-20006352A.pdf
AT28HC256-70SU-T
Hersteller: Microchip Technology
Description: IC EEPROM 256KBIT PAR 28SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ms
Supplier Device Package: 28-SOIC
Memory Format: EEPROM
Technology: EEPROM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TC)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AT28HC256-70SU-T Military-Grade-256-Kbit-High-Speed-Paged-Parallel-EEPROM-Data-Sheet-20006352A.pdf
AT28HC256-70SU-T
Hersteller: Microchip Technology
Description: IC EEPROM 256KBIT PAR 28SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ms
Supplier Device Package: 28-SOIC
Memory Format: EEPROM
Technology: EEPROM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TC)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
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JANTXV2N5339U3
Hersteller: Microchip Technology
Description: TRANS NPN 100V 5A U-3
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: U-3 (TO-276AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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AT27C080-12DC AT27C080%20%28Oct98%29.pdf
AT27C080-12DC
Hersteller: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT27C080-90DC AT27C080%20%28Oct98%29.pdf
AT27C080-90DC
Hersteller: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT27C080-12RC AT27C080%20%28Oct98%29.pdf
AT27C080-12RC
Hersteller: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT27C080-12RI AT27C080%20%28Oct98%29.pdf
AT27C080-12RI
Hersteller: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT27C080-15RC AT27C080%20(Oct98).pdf
AT27C080-15RC
Hersteller: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
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AT27C080-15RI AT27C080%20(Oct98).pdf
AT27C080-15RI
Hersteller: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
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AT27C080-90RC AT27C080%20%28Oct98%29.pdf
AT27C080-90RC
Hersteller: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-90RI AT27C080%20(Oct98).pdf
AT27C080-90RI
Hersteller: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
Produkt ist nicht verfügbar
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ATMXT1664T3-C2U035 mXT1664T3%20Touchscreen%20Controller%20Product%20Datasheet_40002054B.pdf
Hersteller: Microchip Technology
Description: 1664 CHANNEL TOUCHSCREEN CONTROL
Current - Supply: 11.28 mA
Part Status: Active
Touchscreen: 2 Wire Capacitive
Voltage Reference: Internal
Supplier Device Package: 162-UFBGA (10x5)
Resolution (Bits): 12 b
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Interface: I2C, SPI, USB
Mounting Type: Surface Mount
Package / Case: 162-UFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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MIC2505YM-TR MIC2505-6-Single-2A-Dual-1A-High-Side-Switches-DS20005579B.pdf
MIC2505YM-TR
Hersteller: Microchip Technology
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 7.5V
Input Type: Non-Inverting
Rds On (Typ): 30mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
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4+4.47 EUR
25+3.74 EUR
100+3.4 EUR
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ATSAML10E16A-AU SAM-L10L11-Family-DataSheet-DS60001513F.pdf
ATSAML10E16A-AU
Hersteller: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 32TQFP
DigiKey Programmable: Not Verified
Number of I/O: 25
Part Status: Active
Supplier Device Package: 32-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 10x12b; D/A 1x10b
Core Processor: ARM® Cortex®-M23
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 32-TQFP
Packaging: Tray
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4+4.96 EUR
25+4.55 EUR
100+4.13 EUR
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DSPIC33CH128MP202-I/SS dsPIC33CH128MP508-Family-Data-Sheet-DS70005319D.pdf
DSPIC33CH128MP202-I/SS
Hersteller: Microchip Technology
Description: IC MCU 16BIT 152KB FLASH 28SSOP
DigiKey Programmable: Not Verified
Number of I/O: 21
Part Status: Active
Supplier Device Package: 28-SSOP
Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit Dual-Core
Data Converters: A/D 23x12b; D/A 4x12b
Core Processor: dsPIC
Program Memory Type: FLASH, PRAM
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 20K x 8
Program Memory Size: 152KB (152K x 8)
Speed: 180MHz, 200MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tube
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6+3.41 EUR
25+3.1 EUR
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MSMCJ8.5A/TR 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS
Produkt ist nicht verfügbar
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JAN1N5297UR-1 123508-lds-0160-pdf
JAN1N5297UR-1
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
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JANTXV1N5297UR-1 123508-lds-0160-pdf
JANTXV1N5297UR-1
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Discontinued at Digi-Key
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
Produkt ist nicht verfügbar
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24FC16T-I/SN 20001703M.pdf
24FC16T-I/SN
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
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24FC16T-I/SN 20001703M.pdf
24FC16T-I/SN
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
auf Bestellung 3381 Stücke:
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AnzahlPreis
40+0.44 EUR
41+0.43 EUR
100+0.42 EUR
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24FC16H-I/SN 20002118B.pdf
24FC16H-I/SN
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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40+0.44 EUR
41+0.43 EUR
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24FC16-I/SN 20001703M.pdf
24FC16-I/SN
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
auf Bestellung 1069 Stücke:
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40+0.44 EUR
41+0.43 EUR
100+0.42 EUR
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24FC16T-I/MS 20001703M.pdf
24FC16T-I/MS
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
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24FC16T-I/MS 20001703M.pdf
24FC16T-I/MS
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
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24FC16-I/MS 20001703M.pdf
24FC16-I/MS
Hersteller: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
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JAN2N7370 132544-lds-0208
Hersteller: Microchip Technology
Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
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JANTX2N7370 132544-lds-0208
Hersteller: Microchip Technology
Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
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JANTXV2N7370 132544-lds-0208
Hersteller: Microchip Technology
Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
Produkt ist nicht verfügbar
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VCC1-1544-50M0000000 VCC1154450M0000000.pdf
Hersteller: Microchip Technology
Description: CUSTOM CMOS XO
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 20mA
Height - Seated (Max): 0.075" (1.90mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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JAN1N4114-1 1N4614-1-1n4627e3+%2C1N4099-1_1N4135-1_e3.pdf
JAN1N4114-1
Hersteller: Microchip Technology
Description: DIODE ZENER 20V DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.2 V
Qualification: MIL-PRF-19500/435
Produkt ist nicht verfügbar
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ATSAME51G19A-MU-EFP SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf
ATSAME51G19A-MU-EFP
Hersteller: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 48VQFN
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-VQFN (7x7)
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 192K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Produkt ist nicht verfügbar
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DSC6001HE2A-018.4320 DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf
DSC6001HE2A-018.4320
Hersteller: Microchip Technology
Description: MEMS OSC XO 18.4320MHZ CMOS SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VFLGA (1.6x1.2)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 18.432 MHz
Base Resonator: MEMS
auf Bestellung 800 Stücke:
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9+2.02 EUR
25+1.72 EUR
100+1.56 EUR
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