Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276106) > Seite 464 nach 4602
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AT90CAN64-15AZ | Microchip Technology |
 Description: IC MCU 8BIT 64KB FLASH 64TQFPDigiKey Programmable: Verified Number of I/O: 53 Part Status: Active Supplier Device Package: 64-TQFP (14x14) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: CANbus, I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: AVR EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 4K x 8 Program Memory Size: 64KB (64K x 8) Speed: 16MHz Qualification: AEC-Q100 Grade: Automotive Mounting Type: Surface Mount Package / Case: 64-TQFP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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AT90CAN64-15MT | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 64QFN Data Converters: A/D 8x10b Core Processor: AVR EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 64KB (64K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 64-VFQFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Verified Number of I/O: 53 Part Status: Active Supplier Device Package: 64-QFN (9x9) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: CANbus, I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 8-Bit Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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AT90CAN64-15MT1 | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 64QFN Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: AVR EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 4K x 8 Program Memory Size: 64KB (64K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 64-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Verified Number of I/O: 53 Part Status: Active Supplier Device Package: 64-QFN (9x9) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: CANbus, I2C, SPI, UART/USART |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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AT90CAN64-15MZ | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 64QFN DigiKey Programmable: Verified Number of I/O: 53 Part Status: Active Supplier Device Package: 64-QFN (9x9) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: CANbus, I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: AVR EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 4K x 8 Qualification: AEC-Q100 Grade: Automotive Program Memory Size: 64KB (64K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 64-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| ATA556714N-DDB | Microchip Technology |
Description: IC RFID TRANSP 100-150KHZ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| ATA556714N-DDT | Microchip Technology |
Description: IC RFID TRANSP 100-150KHZ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| ATA556715-PAE | Microchip Technology |
Description: IC RFID TRANSP 100-150KHZ NOA3 Standards: ISO 11784, ISO 11785 Voltage - Supply: 4.2V ~ 4.8V Operating Temperature: -40°C ~ 85°C Type: RFID Transponder Frequency: 100kHz ~ 150kHz Mounting Type: Surface Mount Package / Case: NOA3 Micromodule Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APT30GF60JU2 | Microchip Technology |
Description: IGBT MODULE 600V 58A 192W SOT227 Packaging: Bulk Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V Current - Collector Cutoff (Max): 40 µA Power - Max: 192 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 58 A IGBT Type: NPT Supplier Device Package: SOT-227 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: ISOTOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT30GF60JU3 | Microchip Technology |
Description: IGBT MODULE 600V 58A 192W ISOTOP Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: NPT Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 192 W Current - Collector Cutoff (Max): 40 µA Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT35GT120JU2 | Microchip Technology |
Description: IGBT MOD 1200V 55A 260W SOT227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 260 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 41 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APT35GT120JU3 | Microchip Technology |
Description: IGBT MOD 1200V 55A 260W SOT227 Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 260 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 55 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: SOT-227 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 41 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APT40N60JCU2 | Microchip Technology |
Description: MOSFET N-CH 600V 40A SOT227 Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227 Vgs(th) (Max) @ Id: 3.9V @ 1mA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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APT40N60JCU3 | Microchip Technology |
Description: MOSFET N-CH 600V 40A SOT227 Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227 Vgs(th) (Max) @ Id: 3.9V @ 1mA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT5010JLLU2 | Microchip Technology |
Description: MOSFET N-CH 500V 41A SOT227 Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227 Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 378W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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APT5010JLLU3 | Microchip Technology |
Description: MOSFET N-CH 500V 41A SOT227 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227 Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 378W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 34 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APT5010JVRU2 | Microchip Technology |
Description: MOSFET N-CH 500V 44A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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APT5010JVRU3 | Microchip Technology |
Description: MOSFET N-CH 500V 44A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 21 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APT50GF60JU2 | Microchip Technology |
Description: IGBT MODULE 600V 75A 277W SOT227 Input Capacitance (Cies) @ Vce: 2.25 nF @ 25 V Current - Collector Cutoff (Max): 40 µA Power - Max: 277 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A IGBT Type: NPT Supplier Device Package: SOT-227 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Bulk |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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APT50GT120JU2 | Microchip Technology |
Description: IGBT MOD 1200V 75A 347W SOT227 Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 347 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A IGBT Type: Trench Field Stop Supplier Device Package: SOT-227 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APT50GT120JU3 | Microchip Technology |
Description: IGBT MOD 1200V 75A 347W SOT227 Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 347 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A IGBT Type: Trench Field Stop Supplier Device Package: SOT-227 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APT50M75JLLU2 | Microchip Technology |
Description: MOSFET N-CH 500V 51A SOT227 Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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APT50M75JLLU3 | Microchip Technology |
Description: MOSFET N-CH 500V 51A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 31 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APT50N60JCCU2 | Microchip Technology |
Description: MOSFET N-CH 600V 50A SOT227 Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227 Vgs(th) (Max) @ Id: 3.9V @ 3mA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APT60GF60JU2 | Microchip Technology |
Description: IGBT MOD 600V 93A 378W SOT-227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 93 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 378 W Current - Collector Cutoff (Max): 80 µA Input Capacitance (Cies) @ Vce: 3.59 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APT60GF60JU3 | Microchip Technology |
Description: IGBT MOD 600V 93A 378W SOT-227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 93 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 378 W Current - Collector Cutoff (Max): 80 µA Input Capacitance (Cies) @ Vce: 3.59 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APT75GT120JU2 | Microchip Technology |
Description: IGBT MOD 1200V 100A 416W SOT227 Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 416 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A IGBT Type: Trench Field Stop Supplier Device Package: SOT-227 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Bulk |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75GT120JU3 | Microchip Technology |
Description: IGBT MOD 1200V 100A 416W SOT227 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 33 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTC60AM18SCG | Microchip Technology |
Description: MOSFET 2N-CH 600V 143A SP6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APTC60AM35SCTG | Microchip Technology |
Description: MOSFET 2N-CH 600V 72A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTC60AM35T1G | Microchip Technology |
Description: MOSFET 2N-CH 600V 72A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTC60AM45T1G | Microchip Technology |
Description: MOSFET 2N-CH 600V 49A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SP1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTC60DAM18CTG | Microchip Technology |
Description: MOSFET N-CH 600V 143A SP4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTC60DDAM35T3G | Microchip Technology |
Description: MOSFET 2N-CH 600V 72A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTC60HM35T3G | Microchip Technology |
Description: MOSFET 4N-CH 600V 72A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTC60HM45T1G | Microchip Technology |
Description: MOSFET 4N-CH 600V 49A SP1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTC60HM70SCTG | Microchip Technology |
Description: MOSFET 4N-CH 600V 39A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: SP4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| APTC60HM70T1G | Microchip Technology |
Description: MOSFET 4N-CH 600V 39A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: SP1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| APTC60HM70T3G | Microchip Technology |
Description: MOSFET 4N-CH 600V 39A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTC60SKM24T1G | Microchip Technology |
Description: MOSFET N-CH 600V 95A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SP1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTC60TAM35PG | Microchip Technology |
Description: MOSFET 6N-CH 600V 72A SP6-P Supplier Device Package: SP6-P Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Current - Continuous Drain (Id) @ 25°C: 72A Drain to Source Voltage (Vdss): 600V Power - Max: 416W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTC60TDUM35PG | Microchip Technology |
Description: MOSFET 6N-CH 600V 72A SP6-P Supplier Device Package: SP6-P Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Current - Continuous Drain (Id) @ 25°C: 72A Drain to Source Voltage (Vdss): 600V Power - Max: 416W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTC80A10SCTG | Microchip Technology |
Description: MOSFET 2N-CH 800V 42A SP4 Supplier Device Package: SP4 Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V Current - Continuous Drain (Id) @ 25°C: 42A Drain to Source Voltage (Vdss): 800V Power - Max: 416W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: SP4 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| APTC80A15SCTG | Microchip Technology |
Description: MOSFET 2N-CH 800V 28A SP4 Supplier Device Package: SP4 Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Current - Continuous Drain (Id) @ 25°C: 28A Drain to Source Voltage (Vdss): 800V Power - Max: 277W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: SP4 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| APTC80AM75SCG | Microchip Technology |
Description: MOSFET 2N-CH 800V 56A SP6 Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 3.9V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V Current - Continuous Drain (Id) @ 25°C: 56A Drain to Source Voltage (Vdss): 800V Power - Max: 568W Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| APTC80DDA15T3G | Microchip Technology |
Description: MOSFET 2N-CH 800V 28A SP3 Power - Max: 277W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk Supplier Device Package: SP3 Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Current - Continuous Drain (Id) @ 25°C: 28A Drain to Source Voltage (Vdss): 800V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| APTC80H15T1G | Microchip Technology |
Description: MOSFET 4N-CH 800V 28A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| APTC80H15T3G | Microchip Technology |
Description: MOSFET 4N-CH 800V 28A SP3 Part Status: Active Supplier Device Package: SP3 Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Current - Continuous Drain (Id) @ 25°C: 28A Drain to Source Voltage (Vdss): 800V Power - Max: 277W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| APTC80H29SCTG | Microchip Technology |
Description: MOSFET 4N-CH 800V 15A SP4 Supplier Device Package: SP4 Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Current - Continuous Drain (Id) @ 25°C: 15A Drain to Source Voltage (Vdss): 800V Power - Max: 156W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP4 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| APTC80H29T3G | Microchip Technology |
Description: MOSFET 4N-CH 800V 15A SP3 Supplier Device Package: SP3 Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Current - Continuous Drain (Id) @ 25°C: 15A Drain to Source Voltage (Vdss): 800V Power - Max: 156W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
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APTC80TA15PG | Microchip Technology |
Description: MOSFET 6N-CH 800V 28A SP6-P Package / Case: SP6 Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Current - Continuous Drain (Id) @ 25°C: 28A Drain to Source Voltage (Vdss): 800V Power - Max: 277W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Supplier Device Package: SP6-P Vgs(th) (Max) @ Id: 3.9V @ 2mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APTC80TDU15PG | Microchip Technology |
Description: MOSFET 6N-CH 800V 28A SP6-P Supplier Device Package: SP6-P Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Current - Continuous Drain (Id) @ 25°C: 28A Drain to Source Voltage (Vdss): 800V Power - Max: 277W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| APTCV40H60CT1G | Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
| APTCV50H60T3G | Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT, Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTDF200H60G | Microchip Technology |
Description: BRIDGE RECT 1PHASE 600V 270A SP6 Current - Reverse Leakage @ Vr: 350 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A Current - Average Rectified (Io): 270 A Voltage - Peak Reverse (Max): 600 V Supplier Device Package: SP6 Technology: Standard Operating Temperature: -40°C ~ 175°C (TJ) Diode Type: Single Phase Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| APTDF30H1201G | Microchip Technology |
Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTDF30H601G | Microchip Technology |
Description: BRIDGE RECT 1PHASE 600V 42A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: SP1 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 42 A Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 26 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTDF400AA170G | Microchip Technology |
Description: DIODE MODULE GP 1700V 480A SP6 Packaging: Bulk Package / Case: LP4 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 572 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 480A Supplier Device Package: SP6 Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A Current - Reverse Leakage @ Vr: 750 µA @ 1700 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTDF400AK100G | Microchip Technology |
Description: DIODE MODULE GP 1000V 500A SP6 Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 400 A Voltage - DC Reverse (Vr) (Max): 1000 V Supplier Device Package: SP6 Current - Average Rectified (Io) (per Diode): 500A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 290 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: LP4 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTDF400AK120G | Microchip Technology |
Description: DIODE MODULE 1.2KV 470A SP6 Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Supplier Device Package: SP6 Current - Average Rectified (Io) (per Diode): 470A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 385 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: LP4 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APTDF400AK170G | Microchip Technology |
Description: DIODE MODULE GP 1700V 480A SP6 Packaging: Bulk Package / Case: LP4 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 572 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 480A Supplier Device Package: SP6 Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A Current - Reverse Leakage @ Vr: 750 µA @ 1700 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AT90CAN64-15AZ |
|
Hersteller: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64TQFP
DigiKey Programmable: Verified
Number of I/O: 53
Part Status: Active
Supplier Device Package: 64-TQFP (14x14)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: AVR
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 64-TQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 8BIT 64KB FLASH 64TQFP
DigiKey Programmable: Verified
Number of I/O: 53
Part Status: Active
Supplier Device Package: 64-TQFP (14x14)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: AVR
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 64-TQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AT90CAN64-15MT |
|
Hersteller: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64QFN
Data Converters: A/D 8x10b
Core Processor: AVR
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Verified
Number of I/O: 53
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Qualification: AEC-Q100
Grade: Automotive
Description: IC MCU 8BIT 64KB FLASH 64QFN
Data Converters: A/D 8x10b
Core Processor: AVR
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Verified
Number of I/O: 53
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AT90CAN64-15MT1 |
|
Hersteller: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64QFN
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: AVR
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Verified
Number of I/O: 53
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, I2C, SPI, UART/USART
Description: IC MCU 8BIT 64KB FLASH 64QFN
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: AVR
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Verified
Number of I/O: 53
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, I2C, SPI, UART/USART
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AT90CAN64-15MZ |
|
Hersteller: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64QFN
DigiKey Programmable: Verified
Number of I/O: 53
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: AVR
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Qualification: AEC-Q100
Grade: Automotive
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 8BIT 64KB FLASH 64QFN
DigiKey Programmable: Verified
Number of I/O: 53
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: AVR
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Qualification: AEC-Q100
Grade: Automotive
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ATA556714N-DDB |
|
Hersteller: Microchip Technology
Description: IC RFID TRANSP 100-150KHZ
Description: IC RFID TRANSP 100-150KHZ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ATA556714N-DDT |
|
Hersteller: Microchip Technology
Description: IC RFID TRANSP 100-150KHZ
Description: IC RFID TRANSP 100-150KHZ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ATA556715-PAE |
|
Hersteller: Microchip Technology
Description: IC RFID TRANSP 100-150KHZ NOA3
Standards: ISO 11784, ISO 11785
Voltage - Supply: 4.2V ~ 4.8V
Operating Temperature: -40°C ~ 85°C
Type: RFID Transponder
Frequency: 100kHz ~ 150kHz
Mounting Type: Surface Mount
Package / Case: NOA3 Micromodule
Packaging: Bulk
Description: IC RFID TRANSP 100-150KHZ NOA3
Standards: ISO 11784, ISO 11785
Voltage - Supply: 4.2V ~ 4.8V
Operating Temperature: -40°C ~ 85°C
Type: RFID Transponder
Frequency: 100kHz ~ 150kHz
Mounting Type: Surface Mount
Package / Case: NOA3 Micromodule
Packaging: Bulk
Produkt ist nicht verfügbar
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| APT30GF60JU2 |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 58A 192W SOT227
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
Current - Collector Cutoff (Max): 40 µA
Power - Max: 192 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 58 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Description: IGBT MODULE 600V 58A 192W SOT227
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
Current - Collector Cutoff (Max): 40 µA
Power - Max: 192 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 58 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Produkt ist nicht verfügbar
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| APT30GF60JU3 |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 58A 192W ISOTOP
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 192 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
Description: IGBT MODULE 600V 58A 192W ISOTOP
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 192 W
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 1.85 nF @ 25 V
Produkt ist nicht verfügbar
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| APT35GT120JU2 |
|
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 55A 260W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
Description: IGBT MOD 1200V 55A 260W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
Produkt ist nicht verfügbar
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| APT35GT120JU3 |
|
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 55A 260W SOT227
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 260 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
Description: IGBT MOD 1200V 55A 260W SOT227
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 260 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
Produkt ist nicht verfügbar
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| APT40N60JCU2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 40A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Description: MOSFET N-CH 600V 40A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 46.68 EUR |
| APT40N60JCU3 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 40A SOT227
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
Description: MOSFET N-CH 600V 40A SOT227
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT5010JLLU2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 41A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Description: MOSFET N-CH 500V 41A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 49.14 EUR |
| APT5010JLLU3 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 41A SOT227
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 500V 41A SOT227
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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| APT5010JVRU2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 52.01 EUR |
| APT5010JVRU3 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
Produkt ist nicht verfügbar
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| APT50GF60JU2 |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 75A 277W SOT227
Input Capacitance (Cies) @ Vce: 2.25 nF @ 25 V
Current - Collector Cutoff (Max): 40 µA
Power - Max: 277 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
Description: IGBT MODULE 600V 75A 277W SOT227
Input Capacitance (Cies) @ Vce: 2.25 nF @ 25 V
Current - Collector Cutoff (Max): 40 µA
Power - Max: 277 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 53.13 EUR |
| APT50GT120JU2 |
|
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 75A 347W SOT227
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
Description: IGBT MOD 1200V 75A 347W SOT227
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
Produkt ist nicht verfügbar
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| APT50GT120JU3 |
|
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 75A 347W SOT227
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
Description: IGBT MOD 1200V 75A 347W SOT227
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
Produkt ist nicht verfügbar
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| APT50M75JLLU2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 51A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 500V 51A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 56.48 EUR |
| APT50M75JLLU3 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 51A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Description: MOSFET N-CH 500V 51A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Produkt ist nicht verfügbar
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| APT50N60JCCU2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 50A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Description: MOSFET N-CH 600V 50A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
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| APT60GF60JU2 |
|
Hersteller: Microchip Technology
Description: IGBT MOD 600V 93A 378W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 3.59 nF @ 25 V
Description: IGBT MOD 600V 93A 378W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 3.59 nF @ 25 V
Produkt ist nicht verfügbar
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| APT60GF60JU3 |
|
Hersteller: Microchip Technology
Description: IGBT MOD 600V 93A 378W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 3.59 nF @ 25 V
Description: IGBT MOD 600V 93A 378W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 3.59 nF @ 25 V
Produkt ist nicht verfügbar
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| APT75GT120JU2 |
|
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 100A 416W SOT227
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 416 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
Description: IGBT MOD 1200V 100A 416W SOT227
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 416 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.44 EUR |
| 100+ | 45.36 EUR |
| APT75GT120JU3 |
|
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 100A 416W SOT227
Description: IGBT MOD 1200V 100A 416W SOT227
Produkt ist nicht verfügbar
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| APTC60AM18SCG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 600V 143A SP6
Description: MOSFET 2N-CH 600V 143A SP6
Produkt ist nicht verfügbar
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| APTC60AM35SCTG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
Description: MOSFET 2N-CH 600V 72A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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| APTC60AM35T1G |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP1
Description: MOSFET 2N-CH 600V 72A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP1
Produkt ist nicht verfügbar
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| APTC60AM45T1G |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
Produkt ist nicht verfügbar
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| APTC60DAM18CTG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 143A SP4
Description: MOSFET N-CH 600V 143A SP4
Produkt ist nicht verfügbar
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| APTC60DDAM35T3G |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
Description: MOSFET 2N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
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| APTC60HM35T3G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
Description: MOSFET 4N-CH 600V 72A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
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| APTC60HM45T1G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 600V 49A SP1
Description: MOSFET 4N-CH 600V 49A SP1
Produkt ist nicht verfügbar
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| APTC60HM70SCTG |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP4
Description: MOSFET 4N-CH 600V 39A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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| APTC60HM70T1G |
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP1
Description: MOSFET 4N-CH 600V 39A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP1
Produkt ist nicht verfügbar
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| APTC60HM70T3G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP3
Description: MOSFET 4N-CH 600V 39A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
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| APTC60SKM24T1G |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Produkt ist nicht verfügbar
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| APTC60TAM35PG |
|
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 600V 72A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET 6N-CH 600V 72A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTC60TDUM35PG |
|
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 600V 72A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET 6N-CH 600V 72A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTC80A10SCTG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 800V 42A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A
Drain to Source Voltage (Vdss): 800V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Description: MOSFET 2N-CH 800V 42A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A
Drain to Source Voltage (Vdss): 800V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTC80A15SCTG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Description: MOSFET 2N-CH 800V 28A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTC80AM75SCG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 800V 56A SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 56A
Drain to Source Voltage (Vdss): 800V
Power - Max: 568W
Technology: MOSFET (Metal Oxide)
Description: MOSFET 2N-CH 800V 56A SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 56A
Drain to Source Voltage (Vdss): 800V
Power - Max: 568W
Technology: MOSFET (Metal Oxide)
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| APTC80DDA15T3G |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP3
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Description: MOSFET 2N-CH 800V 28A SP3
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTC80H15T1G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
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| APTC80H15T3G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 800V 28A SP3
Part Status: Active
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: MOSFET 4N-CH 800V 28A SP3
Part Status: Active
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTC80H29SCTG |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 800V
Power - Max: 156W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Description: MOSFET 4N-CH 800V 15A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 800V
Power - Max: 156W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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Stück im Wert von UAH
| APTC80H29T3G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 800V
Power - Max: 156W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: MOSFET 4N-CH 800V 15A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A
Drain to Source Voltage (Vdss): 800V
Power - Max: 156W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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Stück im Wert von UAH
| APTC80TA15PG |
|
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P
Package / Case: SP6
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Description: MOSFET 6N-CH 800V 28A SP6-P
Package / Case: SP6
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 2mA
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Stück im Wert von UAH
| APTC80TDU15PG |
|
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET 6N-CH 800V 28A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
Power - Max: 277W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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Stück im Wert von UAH
| APTCV40H60CT1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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| APTCV50H60T3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT, Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT, Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Produkt ist nicht verfügbar
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| APTDF200H60G |
|
Hersteller: Microchip Technology
Description: BRIDGE RECT 1PHASE 600V 270A SP6
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Average Rectified (Io): 270 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: SP6
Technology: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 600V 270A SP6
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 200 A
Current - Average Rectified (Io): 270 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: SP6
Technology: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 223.13 EUR |
| APTDF30H1201G |
|
Hersteller: Microchip Technology
Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1
Description: BRIDGE RECT 1PHASE 1.2KV 43A SP1
Produkt ist nicht verfügbar
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| APTDF30H601G |
|
Hersteller: Microchip Technology
Description: BRIDGE RECT 1PHASE 600V 42A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 42 A
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 42A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 42 A
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
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| APTDF400AA170G |
|
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1700V 480A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
Description: DIODE MODULE GP 1700V 480A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
Produkt ist nicht verfügbar
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| APTDF400AK100G |
|
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1000V 500A SP6
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 500A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
Description: DIODE MODULE GP 1000V 500A SP6
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 500A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTDF400AK120G |
|
Hersteller: Microchip Technology
Description: DIODE MODULE 1.2KV 470A SP6
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 470A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 385 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Tube
Description: DIODE MODULE 1.2KV 470A SP6
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 400 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: SP6
Current - Average Rectified (Io) (per Diode): 470A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 385 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: LP4
Packaging: Tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTDF400AK170G |
|
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1700V 480A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
Description: DIODE MODULE GP 1700V 480A SP6
Packaging: Bulk
Package / Case: LP4
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: SP6
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 400 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
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