APTGF25H120T1G MICROSEMI
Hersteller: MICROSEMI
SP1/Full - Bridge NPT IGBT Power Module APTGF25H120
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Technische Details APTGF25H120T1G MICROSEMI
Description: IGBT MODULE 1200V 40A 208W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: NPT, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V.
Weitere Produktangebote APTGF25H120T1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
APTGF25H120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 40A 208W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: NPT Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 208 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTGF25H120T1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 40A 208W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Description: IGBT MODULE 1200V 40A 208W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH