APTGF25H120T1G MICROSEMI
Hersteller: MICROSEMI
SP1/Full - Bridge NPT IGBT Power Module APTGF25H120
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Technische Details APTGF25H120T1G MICROSEMI
Description: IGBT MODULE 1200V 40A 208W SP1, Configuration: Full Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 208 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 40 A, IGBT Type: NPT, Supplier Device Package: SP1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A.
Weitere Produktangebote APTGF25H120T1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
APTGF25H120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 40A 208W SP1 Configuration: Full Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 208 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 40 A IGBT Type: NPT Supplier Device Package: SP1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTGF25H120T1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 40A 208W SP1
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 208 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
IGBT Type: NPT
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Description: IGBT MODULE 1200V 40A 208W SP1
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 208 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
IGBT Type: NPT
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH