APTC80A10SCTG Microchip Technology

Description: MOSFET 2N-CH 800V 42A SP4, Supplier Device Package: SP4, Vgs(th) (Max) @ Id: 3.9V @ 3mA, Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 42A, Drain to Source Voltage (Vdss): 800V, Power - Max: 416W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: SP4, Packaging: Bulk.