APTGF150DH120G Microsemi

Description: IGBT MODULE 1200V 200A 961W SP6, Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V, Current - Collector Cutoff (Max): 350 µA, Power - Max: 961 W, IGBT Type: NPT, Supplier Device Package: SP6, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A, Configuration: Asymmetrical Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 200 A, Part Status: Obsolete.