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1N5921BUR-1/TR 1N5921BUR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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1N5921B 1N5921B Microchip Technology 10922-sa5-57-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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1N5921B/TR 1N5921B/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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AT24C21-10SC-2.5 AT24C21-10SC-2.5 Microchip Technology AT24C21_Rev00.pdf Description: IC EEPROM 1KBIT I2C 100KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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EV12V58A EV12V58A Microchip Technology MCP3004-User-Guide-DS50003604.pdf Description: MCP3004 4CH 10BIT SAR ADC EVB
Packaging: Box
Function: Analog to Digital Converter (ADC)
Type: Data Acquisition
Contents: Board(s)
Utilized IC / Part: MCP3004
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JAN1N6628US JAN1N6628US Microchip Technology Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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AT89LP6440-20MU AT89LP6440-20MU Microchip Technology doc3706.pdf Description: IC MCU 8BIT 64KB FLASH 44VQFN
Packaging: Tray
Package / Case: 44-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: 8051
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-VQFN (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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VXA4-1D1-25M0000000 Microchip Technology 1243749-vxa4 Description: VXA4-1D1-25M0000000
Packaging: Bag
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PIC18F24K42T-E/SSVAO PIC18F24K42T-E/SSVAO Microchip Technology Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 16KB (8K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 25
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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JANTXV1N5527B-1 JANTXV1N5527B-1 Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.8 V
Qualification: MIL-PRF-19500/437
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JANTXV1N5527B-1/TR JANTXV1N5527B-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.8 V
Qualification: MIL-PRF-19500/437
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DSC1124DI1-027.0000T DSC1124DI1-027.0000T Microchip Technology DSC1104-24-Low-Jitter-Precision-HCSL-Oscillator-DS20005870B.pdf Description: MEMS OSC XO 27.0000MHZ HCSL SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 42mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 27 MHz
Base Resonator: MEMS
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JANTXV1N6627U JANTXV1N6627U Microchip Technology Description: DIODE GEN PURP 400V 1.75A D-5B
Supplier Device Package: D-5B
Current - Average Rectified (Io): 1.75A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Qualification: MIL-PRF-19500/590
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
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DSC1001CL2-133.0000T DSC1001CL2-133.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC., LOW POWER, 133MHZ, LV
Packaging: Strip
Base Resonator: MEMS
Frequency: 133 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 16.6mA
Voltage - Supply: 1.8V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 4-VDFN
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1N6336US 1N6336US Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
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JAN1N6336US/TR JAN1N6336US/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANTX1N6336US JANTX1N6336US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 33V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANTX1N6336US/TR JANTX1N6336US/TR Microchip Technology 11083-lds-0193-1-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANTXV1N6336US/TR JANTXV1N6336US/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANS1N6336US/TR JANS1N6336US/TR Microchip Technology 11083-lds-0193-1-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANS1N6336US JANS1N6336US Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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PIC32MZ1024EFE100T-E/GJX PIC32MZ1024EFE100T-E/GJX Microchip Technology PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf Description: IC MCU 32BIT 1MB FLASH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PIC32MZ1024EFE100T-E/GJX PIC32MZ1024EFE100T-E/GJX Microchip Technology PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf Description: IC MCU 32BIT 1MB FLASH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PIC32CK1025SG01064-I/3ZB-SL3 PIC32CK1025SG01064-I/3ZB-SL3 Microchip Technology PIC32CK-SG01-SG00-GC01-GC00-Family-Data-Sheet-DS60001795.pdf Description: M33 HSM 1MB/256 64 TQFP
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SDHC, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, I2S, LVD, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 50
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UPT12Re3/TR7 UPT12Re3/TR7 Microchip Technology UPT+RF01103_Rev_B_Final-PD-000177967+%284%29.pdf Description: TVS DIODE 12VWM 21.6VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 150W
Power Line Protection: No
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1N3312RA 1N3312RA Microchip Technology 10905-sa5-21-datasheet Description: DIODE ZENER 13V 50W DO5
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1.1 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
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1N3312RB 1N3312RB Microchip Technology 10905-sa5-21-datasheet Description: DIODE ZENER 13V 50W DO5
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1.1 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
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JANTX1N757CUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Grade: Military
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/127
Current - Reverse Leakage @ Vr: 1 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
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MLCE80A Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MLCE80Ae3 Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MASMCJLCE80A MASMCJLCE80A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJLCE80Ae3 MASMCJLCE80Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCGLCE80A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCGLCE80Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MALCE80A Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MALCE80Ae3 Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MXLCE80A Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
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MXLCE80Ae3 Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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MXLLCE80A Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLLCE80Ae3 Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCGLCE80A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCGLCE80Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCGLCE80A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCG)
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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MXSMCGLCE80Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCG)
Voltage - Reverse Standoff (Typ): 80V
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MXSMCJLCE80A MXSMCJLCE80A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC DO214AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Produkt ist nicht verfügbar
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MXSMCJLCE80Ae3 MXSMCJLCE80Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC DO214AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Produkt ist nicht verfügbar
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1N6628U 1N6628U Microchip Technology 1N6626US%2C1N6631US.pdf Description: DIODE GP 660V 1.75A SQ-MELF B
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 1.75A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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1N6628US/TR 1N6628US/TR Microchip Technology 11069-sd53a-datasheet Description: DIODE GEN PURP 600V 2.3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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1N6628U/TR 1N6628U/TR Microchip Technology Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
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JAN1N6628US/TR JAN1N6628US/TR Microchip Technology Description: DIODE GP 660V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JAN1N6628U/TR JAN1N6628U/TR Microchip Technology Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JANTX1N6628US JANTX1N6628US Microchip Technology 11069-sd53a-datasheet Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JANTX1N6628U JANTX1N6628U Microchip Technology Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
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JANTX1N6628U/TR JANTX1N6628U/TR Microchip Technology Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
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JANTXV1N6628US/TR JANTXV1N6628US/TR Microchip Technology Description: DIODE GEN PURP 660V 1.75A D-5B
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 1.75A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/590
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JANTXV1N6628U/TR JANTXV1N6628U/TR Microchip Technology Description: DIODE GP 660V 1.75A SQ-MELF
Qualification: MIL-PRF-19500/590
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 1.75A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
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MIC5200-5.0BM-TR MIC5200-5.0BM-TR Microchip Technology MIC5200-100mA-Low-Dropout-Regulator-DS20005578B.pdf Description: IC REG LINEAR 5V 100MA 8SOIC
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 26V
Current - Quiescent (Iq): 350 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply (Max): 1.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.35V @ 100mA
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1N3823AUR-1/TR 1N3823AUR-1/TR Microchip Technology 1N3821AUR-1-1N3828AUR-1.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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1N3823AUR-1/TR 1N3823AUR-1/TR Microchip Technology 1N3821AUR-1-1N3828AUR-1.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
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VCC1-G3D-100M000000 Microchip Technology VCC1-April-2020.pdf Description: CMOS XO +2.5 VDC 15PF -40C TO +8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N5921BUR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5921BUR-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
Produkt ist nicht verfügbar
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1N5921B 10922-sa5-57-datasheet
1N5921B
Hersteller: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
Produkt ist nicht verfügbar
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1N5921B/TR
1N5921B/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
Produkt ist nicht verfügbar
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AT24C21-10SC-2.5 AT24C21_Rev00.pdf
AT24C21-10SC-2.5
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 100KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EV12V58A MCP3004-User-Guide-DS50003604.pdf
EV12V58A
Hersteller: Microchip Technology
Description: MCP3004 4CH 10BIT SAR ADC EVB
Packaging: Box
Function: Analog to Digital Converter (ADC)
Type: Data Acquisition
Contents: Board(s)
Utilized IC / Part: MCP3004
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+48.49 EUR
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JAN1N6628US
JAN1N6628US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
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AT89LP6440-20MU doc3706.pdf
AT89LP6440-20MU
Hersteller: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 44VQFN
Packaging: Tray
Package / Case: 44-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: 8051
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-VQFN (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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VXA4-1D1-25M0000000 1243749-vxa4
Hersteller: Microchip Technology
Description: VXA4-1D1-25M0000000
Packaging: Bag
Produkt ist nicht verfügbar
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PIC18F24K42T-E/SSVAO
PIC18F24K42T-E/SSVAO
Hersteller: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 16KB (8K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 25
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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JANTXV1N5527B-1
JANTXV1N5527B-1
Hersteller: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.8 V
Qualification: MIL-PRF-19500/437
Produkt ist nicht verfügbar
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JANTXV1N5527B-1/TR
JANTXV1N5527B-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.8 V
Qualification: MIL-PRF-19500/437
Produkt ist nicht verfügbar
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DSC1124DI1-027.0000T DSC1104-24-Low-Jitter-Precision-HCSL-Oscillator-DS20005870B.pdf
DSC1124DI1-027.0000T
Hersteller: Microchip Technology
Description: MEMS OSC XO 27.0000MHZ HCSL SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 42mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 27 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
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JANTXV1N6627U
JANTXV1N6627U
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1.75A D-5B
Supplier Device Package: D-5B
Current - Average Rectified (Io): 1.75A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Qualification: MIL-PRF-19500/590
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Produkt ist nicht verfügbar
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DSC1001CL2-133.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001CL2-133.0000T
Hersteller: Microchip Technology
Description: MEMS OSC., LOW POWER, 133MHZ, LV
Packaging: Strip
Base Resonator: MEMS
Frequency: 133 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 16.6mA
Voltage - Supply: 1.8V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 105°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 4-VDFN
Produkt ist nicht verfügbar
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1N6336US
1N6336US
Hersteller: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Produkt ist nicht verfügbar
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JAN1N6336US/TR
JAN1N6336US/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
Produkt ist nicht verfügbar
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JANTX1N6336US 11083-lds-0193-1-datasheet
JANTX1N6336US
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
Produkt ist nicht verfügbar
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JANTX1N6336US/TR 11083-lds-0193-1-datasheet
JANTX1N6336US/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
Produkt ist nicht verfügbar
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JANTXV1N6336US/TR
JANTXV1N6336US/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
Produkt ist nicht verfügbar
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JANS1N6336US/TR 11083-lds-0193-1-datasheet
JANS1N6336US/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
Produkt ist nicht verfügbar
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JANS1N6336US
JANS1N6336US
Hersteller: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
Produkt ist nicht verfügbar
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PIC32MZ1024EFE100T-E/GJX PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf
PIC32MZ1024EFE100T-E/GJX
Hersteller: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PIC32MZ1024EFE100T-E/GJX PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf
PIC32MZ1024EFE100T-E/GJX
Hersteller: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PIC32CK1025SG01064-I/3ZB-SL3 PIC32CK-SG01-SG00-GC01-GC00-Family-Data-Sheet-DS60001795.pdf
PIC32CK1025SG01064-I/3ZB-SL3
Hersteller: Microchip Technology
Description: M33 HSM 1MB/256 64 TQFP
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SDHC, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, I2S, LVD, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 50
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.65 EUR
25+6.04 EUR
100+5.49 EUR
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UPT12Re3/TR7 UPT+RF01103_Rev_B_Final-PD-000177967+%284%29.pdf
UPT12Re3/TR7
Hersteller: Microchip Technology
Description: TVS DIODE 12VWM 21.6VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
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1N3312RA 10905-sa5-21-datasheet
1N3312RA
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 50W DO5
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1.1 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
Produkt ist nicht verfügbar
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1N3312RB 10905-sa5-21-datasheet
1N3312RB
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 50W DO5
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1.1 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
Produkt ist nicht verfügbar
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JANTX1N757CUR-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Grade: Military
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/127
Current - Reverse Leakage @ Vr: 1 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Produkt ist nicht verfügbar
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MLCE80A 9498-mlce-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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MLCE80Ae3 9498-mlce-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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MASMCJLCE80A 10562-msmclce-datasheet
MASMCJLCE80A
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MASMCJLCE80Ae3 10562-msmclce-datasheet
MASMCJLCE80Ae3
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MASMCGLCE80A 10562-msmclce-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MASMCGLCE80Ae3 10562-msmclce-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MALCE80A 9498-mlce-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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MALCE80Ae3 9498-mlce-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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MXLCE80A 9498-mlce-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXLCE80Ae3 9498-mlce-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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MXLLCE80A 9498-mlce-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXLLCE80Ae3 9498-mlce-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXLSMCGLCE80A 10562-msmclce-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXLSMCGLCE80Ae3 10562-msmclce-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXSMCGLCE80A 10562-msmclce-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCG)
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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MXSMCGLCE80Ae3 10562-msmclce-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCG)
Voltage - Reverse Standoff (Typ): 80V
Produkt ist nicht verfügbar
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MXSMCJLCE80A 10562-msmclce-datasheet
MXSMCJLCE80A
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC DO214AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Produkt ist nicht verfügbar
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MXSMCJLCE80Ae3 10562-msmclce-datasheet
MXSMCJLCE80Ae3
Hersteller: Microchip Technology
Description: TVS DIODE 80VWM 129VC DO214AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 129V
Voltage - Breakdown (Min): 88.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 80V
Current - Peak Pulse (10/1000µs): 11.6A
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Produkt ist nicht verfügbar
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1N6628U 1N6626US%2C1N6631US.pdf
1N6628U
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF B
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 1.75A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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1N6628US/TR 11069-sd53a-datasheet
1N6628US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 2.3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Produkt ist nicht verfügbar
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1N6628U/TR
1N6628U/TR
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Produkt ist nicht verfügbar
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JAN1N6628US/TR
JAN1N6628US/TR
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
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JAN1N6628U/TR
JAN1N6628U/TR
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
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JANTX1N6628US 11069-sd53a-datasheet
JANTX1N6628US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
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JANTX1N6628U
JANTX1N6628U
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
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JANTX1N6628U/TR
JANTX1N6628U/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
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JANTXV1N6628US/TR
JANTXV1N6628US/TR
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 1.75A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/590
Produkt ist nicht verfügbar
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JANTXV1N6628U/TR
JANTXV1N6628U/TR
Hersteller: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Qualification: MIL-PRF-19500/590
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 1.75A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MIC5200-5.0BM-TR MIC5200-100mA-Low-Dropout-Regulator-DS20005578B.pdf
MIC5200-5.0BM-TR
Hersteller: Microchip Technology
Description: IC REG LINEAR 5V 100MA 8SOIC
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 26V
Current - Quiescent (Iq): 350 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply (Max): 1.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.35V @ 100mA
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1N3823AUR-1/TR 1N3821AUR-1-1N3828AUR-1.pdf
1N3823AUR-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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1N3823AUR-1/TR 1N3821AUR-1-1N3828AUR-1.pdf
1N3823AUR-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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VCC1-G3D-100M000000 VCC1-April-2020.pdf
Hersteller: Microchip Technology
Description: CMOS XO +2.5 VDC 15PF -40C TO +8
Packaging: Tape & Reel (TR)
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