APTC60TAM35PG Microchip Technology
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Technische Details APTC60TAM35PG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Drain-source voltage: 600V, Drain current: 54A, On-state resistance: 35mΩ, Power dissipation: 416W, Case: SP6P, Technology: CoolMOS™; SJ-MOSFET, Gate-source voltage: ±20V, Topology: MOSFET x3 half-bridge, Pulsed drain current: 200A, Type of semiconductor module: MOSFET transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC60TAM35PG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTC60TAM35PG | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A On-state resistance: 35mΩ Power dissipation: 416W Case: SP6P Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: MOSFET x3 half-bridge Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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APTC60TAM35PG | Hersteller : Microchip Technology |
Description: MOSFET 6N-CH 600V 72A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP6-P |
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| APTC60TAM35PG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules DOR CC6505 |
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| APTC60TAM35PG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A On-state resistance: 35mΩ Power dissipation: 416W Case: SP6P Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: MOSFET x3 half-bridge Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |