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APTM120U10SAG APTM120U10SAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1200V 116A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V
Power Dissipation (Max): 3290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Produkt ist nicht verfügbar
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APTM120UM70DAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8101 Description: MOSFET N-CH 1200V 171A SP6
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APTM120UM70FAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8103 Description: MOSFET N-CH 1200V 171A SP6
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APTM20AM04FG APTM20AM04FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+387.53 EUR
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APTM20AM05FG Microchip Technology APTM20AM05F.pdf Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20AM06SG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
Produkt ist nicht verfügbar
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APTM20AM08FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20AM10FTG Microchip Technology APTM20AM10FTG-Rev3.pdf Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20AM10STG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20DAM04G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20DAM05G APTM20DAM05G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20DAM08TG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20DUM04G APTM20DUM04G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20DUM05G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20DUM08TG Microchip Technology 8130-aptm20dum08tg-datasheet Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
Produkt ist nicht verfügbar
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APTM20HM08FG APTM20HM08FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 200V 208A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20HM10FG Microchip Technology APTM20HM10FG-Rev3.pdf Description: MOSFET 4N-CH 200V 175A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20HM16FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 200V 104A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20HM20FTG Microchip Technology APTM20HM20FTG-Rev4.pdf Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20HM20STG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20SKM04G APTM20SKM04G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20SKM08TG Microchip Technology APTM20SKM08TG-Rev3.pdf Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20TAM16FPG APTM20TAM16FPG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 6N-CH 200V 104A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
Produkt ist nicht verfügbar
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APTM20UM03FAG APTM20UM03FAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 580A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Power Dissipation (Max): 2270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20UM04SAG Microchip Technology APTM20UM04SAG-Rev2.pdf Description: MOSFET N-CH 200V 417A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V
Produkt ist nicht verfügbar
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APTM50AM17FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM50AM24SG APTM50AM24SG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 500V 150A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
1+322.8 EUR
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APTM50AM35FTG APTM50AM35FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM50AM38FTG APTM50AM38FTG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8159 Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM50AM38STG APTM50AM38STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8161 Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 6 Stücke:
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1+309.39 EUR
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APTM50DAM17G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
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APTM50DDAM65T3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8170 Description: MOSFET 2N-CH 500V 51A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Part Status: Active
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APTM50H14FT3G APTM50H14FT3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 500V 26A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP3
Part Status: Active
auf Bestellung 13 Stücke:
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1+156.38 EUR
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APTM50H15FT1G Microchip Technology APTM50H15UT1G-Rev0.pdf Description: MOSFET 4N-CH 500V 25A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
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APTM50HM35FG Microchip Technology APTM50HM35FG-Rev3.pdf Description: MOSFET 4N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM50HM38FG Microchip Technology 8189-aptm50hm38fg-datasheet Description: MOSFET 4N-CH 500V 90A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM50HM65FT3G APTM50HM65FT3G Microchip Technology 8190-aptm50hm65ft3g-datasheet Description: MOSFET 4N-CH 500V 51A SP3
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APTM50HM75STG APTM50HM75STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8195 Description: MOSFET 4N-CH 500V 46A SP4
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+282.67 EUR
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APTM50SKM17G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
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APTM50SKM19G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 500V 163A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V
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APTM50TAM65FPG APTM50TAM65FPG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8200 Description: MOSFET 6N-CH 500V 51A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
Part Status: Active
Produkt ist nicht verfügbar
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APTM50UM13SAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8205 Description: MOSFET N-CH 500V 335A SP6
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MICRF600Z TR MICRF600Z TR Microchip Technology MICRF600.pdf Description: TXRX ISM 902-928MHZ 11.5X14.1MM
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MICRF600Z TR MICRF600Z TR Microchip Technology MICRF600.pdf Description: TXRX ISM 902-928MHZ 11.5X14.1MM
Produkt ist nicht verfügbar
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SW500010 SW500010 Microchip Technology 019P Manual.pdf Description: HI-TECH C PRO FOR PIC10/12/16
Packaging: Box
For Use With/Related Products: PIC10, PIC12, PIC14, PIC16, PIC16E
Type: Compiler
Produkt ist nicht verfügbar
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SW500011 SW500011 Microchip Technology 032%20Manual.pdf Description: HI-TECH C PRO FOR PIC32
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DSPIC30F2023-30I/PTD32 DSPIC30F2023-30I/PTD32 Microchip Technology filehandler.aspx?ddocname=en027196 Description: IC MCU 16BIT 12KB FLASH 44TQFP
auf Bestellung 1 Stücke:
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DSPIC30F2020-30I/MMB32 DSPIC30F2020-30I/MMB32 Microchip Technology 70000178d.pdf Description: IC MCU 16BIT 12KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 30 MIPs
Program Memory Size: 12KB (4K x 24)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN-S (6x6)
Number of I/O: 21
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
2+12.04 EUR
10+9.98 EUR
Mindestbestellmenge: 2
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KSZ8842-32MVLI KSZ8842-32MVLI Microchip Technology KSZ8842-16M-32M-Two-Port-Ethernet-Switch-with-Non-PCI-Interface-DS00003459A.pdf Description: IC SWITCH ETH 2P 32BIT 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Function: Switch
Interface: Parallel
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 122mA
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: 128-LQFP (14x14)
DigiKey Programmable: Not Verified
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
1+37.14 EUR
25+30.96 EUR
100+29.89 EUR
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KSZ8862-16MQL-FX KSZ8862-16MQL-FX Microchip Technology KSZ8862-16M-32M-Two-Port-Ethernet-Switch-with-Non-PCI-Interface-and-Fiber-Support-DS00003324A.pdf Description: IC SWITCH ETH 2P 16BIT 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 122mA
Protocol: Ethernet
Standards: 10/100 Base-FL/FX/T/TX/SX PHY
Supplier Device Package: 128-PQFP (14x20)
DigiKey Programmable: Not Verified
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.62 EUR
25+28.84 EUR
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KSZ8862-32MQL-FX KSZ8862-32MQL-FX Microchip Technology KSZ8862-16M-32M-Two-Port-Ethernet-Switch-with-Non-PCI-Interface-and-Fiber-Support-DS00003324A.pdf Description: IC SWITCH ETH 2P 32BIT 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 122mA
Protocol: Ethernet
Standards: 10/100 Base-FL/FX/T/TX/SX PHY
Supplier Device Package: 128-PQFP (14x20)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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KSZ8893FQL-FX KSZ8893FQL-FX Microchip Technology KSZ8893FQL-Single-Chip-3-Port-Switch-with-Fiber-Support-DS00003038B.pdf Description: IC SWITCH ETH 3PORT 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: I2C, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 120mA
Protocol: Ethernet
Standards: 100 Base-FX PHY, TS-1000, 10/100 Base-T/TX PHY
Supplier Device Package: 128-PQFP (14x20)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.37 EUR
25+14.45 EUR
100+13.99 EUR
Mindestbestellmenge: 2
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MAQ5280YME MAQ5280YME Microchip Technology filehandler.aspx?ddocname=en579058 Description: IC REG LDO ADJ 25MA 8SOIC
auf Bestellung 557 Stücke:
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MIC2230-G4YML-TR MIC2230-G4YML-TR Microchip Technology MIC2230-Dual-Synchronous-800mA-800mA-Step-Down-DC-DC-Regulator-DS20005748B.pdf Description: IC REG BUCK 1.2V/1.8V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 1.8V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2230-GSYML-TR MIC2230-GSYML-TR Microchip Technology MIC2230-Dual-Synchronous-800mA-800mA-Step-Down-DC-DC-Regulator-DS20005748B.pdf Description: IC REG BUCK 1.8V/3.3V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2230-J4YML-TR MIC2230-J4YML-TR Microchip Technology MIC2230-Dual-Synchronous-800mA-800mA-Step-Down-DC-DC-Regulator-DS20005748B.pdf Description: IC REG BUCK 1.2V/2.5V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 2.5V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2230-S4YML-TR MIC2230-S4YML-TR Microchip Technology MIC2230-Dual-Synchronous-800mA-800mA-Step-Down-DC-DC-Regulator-DS20005748B.pdf Description: IC REG BUCK 1.2V/3.3V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 3.3V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2238-G4YML-TR MIC2238-G4YML-TR Microchip Technology mic2238.pdf Description: IC REG BUCK 1.2V/1.8V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 1.8V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2238-GSYML-TR MIC2238-GSYML-TR Microchip Technology mic2238.pdf Description: IC REG BUCK 1.8V/3.3V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2238-J4YML-TR MIC2238-J4YML-TR Microchip Technology mic2238.pdf Description: IC REG BUCK 1.2V/2.5V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 2.5V
Part Status: Active
Produkt ist nicht verfügbar
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APTM120U10SAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM120U10SAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 116A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V
Power Dissipation (Max): 3290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
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APTM120UM70DAG index.php?option=com_docman&task=doc_download&gid=8101
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
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APTM120UM70FAG index.php?option=com_docman&task=doc_download&gid=8103
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
Produkt ist nicht verfügbar
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APTM20AM04FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20AM04FG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+387.53 EUR
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APTM20AM05FG APTM20AM05F.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20AM06SG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
Produkt ist nicht verfügbar
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APTM20AM08FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20AM10FTG APTM20AM10FTG-Rev3.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20AM10STG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20DAM04G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20DAM05G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20DAM05G
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20DAM08TG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20DUM04G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20DUM04G
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20DUM05G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20DUM08TG 8130-aptm20dum08tg-datasheet
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
Produkt ist nicht verfügbar
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APTM20HM08FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20HM08FG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 208A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20HM10FG APTM20HM10FG-Rev3.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 175A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20HM16FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 104A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20HM20FTG APTM20HM20FTG-Rev4.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20HM20STG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20SKM04G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20SKM04G
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20SKM08TG APTM20SKM08TG-Rev3.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20TAM16FPG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20TAM16FPG
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 200V 104A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
Produkt ist nicht verfügbar
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APTM20UM03FAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20UM03FAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 580A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Power Dissipation (Max): 2270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 15mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20UM04SAG APTM20UM04SAG-Rev2.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 417A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V
Produkt ist nicht verfügbar
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APTM50AM17FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM50AM24SG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM50AM24SG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 150A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+322.8 EUR
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APTM50AM35FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM50AM35FTG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 99A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM50AM38FTG index.php?option=com_docman&task=doc_download&gid=8159
APTM50AM38FTG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM50AM38STG index.php?option=com_docman&task=doc_download&gid=8161
APTM50AM38STG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 90A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+309.39 EUR
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APTM50DAM17G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Produkt ist nicht verfügbar
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APTM50DDAM65T3G index.php?option=com_docman&task=doc_download&gid=8170
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 500V 51A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP3
Part Status: Active
Produkt ist nicht verfügbar
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APTM50H14FT3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM50H14FT3G
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 500V 26A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP3
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+156.38 EUR
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APTM50H15FT1G APTM50H15UT1G-Rev0.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 500V 25A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP1
Produkt ist nicht verfügbar
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APTM50HM35FG APTM50HM35FG-Rev3.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM50HM38FG 8189-aptm50hm38fg-datasheet
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 500V 90A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM50HM65FT3G 8190-aptm50hm65ft3g-datasheet
APTM50HM65FT3G
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 500V 51A SP3
Produkt ist nicht verfügbar
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APTM50HM75STG index.php?option=com_docman&task=doc_download&gid=8195
APTM50HM75STG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 500V 46A SP4
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+282.67 EUR
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APTM50SKM17G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Produkt ist nicht verfügbar
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APTM50SKM19G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 163A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V
Produkt ist nicht verfügbar
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APTM50TAM65FPG index.php?option=com_docman&task=doc_download&gid=8200
APTM50TAM65FPG
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 500V 51A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
Part Status: Active
Produkt ist nicht verfügbar
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APTM50UM13SAG index.php?option=com_docman&task=doc_download&gid=8205
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 335A SP6
Produkt ist nicht verfügbar
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MICRF600Z TR MICRF600.pdf
MICRF600Z TR
Hersteller: Microchip Technology
Description: TXRX ISM 902-928MHZ 11.5X14.1MM
Produkt ist nicht verfügbar
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MICRF600Z TR MICRF600.pdf
MICRF600Z TR
Hersteller: Microchip Technology
Description: TXRX ISM 902-928MHZ 11.5X14.1MM
Produkt ist nicht verfügbar
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SW500010 019P Manual.pdf
SW500010
Hersteller: Microchip Technology
Description: HI-TECH C PRO FOR PIC10/12/16
Packaging: Box
For Use With/Related Products: PIC10, PIC12, PIC14, PIC16, PIC16E
Type: Compiler
Produkt ist nicht verfügbar
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SW500011 032%20Manual.pdf
SW500011
Hersteller: Microchip Technology
Description: HI-TECH C PRO FOR PIC32
Produkt ist nicht verfügbar
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DSPIC30F2023-30I/PTD32 filehandler.aspx?ddocname=en027196
DSPIC30F2023-30I/PTD32
Hersteller: Microchip Technology
Description: IC MCU 16BIT 12KB FLASH 44TQFP
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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DSPIC30F2020-30I/MMB32 70000178d.pdf
DSPIC30F2020-30I/MMB32
Hersteller: Microchip Technology
Description: IC MCU 16BIT 12KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 30 MIPs
Program Memory Size: 12KB (4K x 24)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN-S (6x6)
Number of I/O: 21
DigiKey Programmable: Not Verified
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.04 EUR
10+9.98 EUR
Mindestbestellmenge: 2
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KSZ8842-32MVLI KSZ8842-16M-32M-Two-Port-Ethernet-Switch-with-Non-PCI-Interface-DS00003459A.pdf
KSZ8842-32MVLI
Hersteller: Microchip Technology
Description: IC SWITCH ETH 2P 32BIT 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Function: Switch
Interface: Parallel
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 122mA
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: 128-LQFP (14x14)
DigiKey Programmable: Not Verified
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.14 EUR
25+30.96 EUR
100+29.89 EUR
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KSZ8862-16MQL-FX KSZ8862-16M-32M-Two-Port-Ethernet-Switch-with-Non-PCI-Interface-and-Fiber-Support-DS00003324A.pdf
KSZ8862-16MQL-FX
Hersteller: Microchip Technology
Description: IC SWITCH ETH 2P 16BIT 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 122mA
Protocol: Ethernet
Standards: 10/100 Base-FL/FX/T/TX/SX PHY
Supplier Device Package: 128-PQFP (14x20)
DigiKey Programmable: Not Verified
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.62 EUR
25+28.84 EUR
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KSZ8862-32MQL-FX KSZ8862-16M-32M-Two-Port-Ethernet-Switch-with-Non-PCI-Interface-and-Fiber-Support-DS00003324A.pdf
KSZ8862-32MQL-FX
Hersteller: Microchip Technology
Description: IC SWITCH ETH 2P 32BIT 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 122mA
Protocol: Ethernet
Standards: 10/100 Base-FL/FX/T/TX/SX PHY
Supplier Device Package: 128-PQFP (14x20)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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KSZ8893FQL-FX KSZ8893FQL-Single-Chip-3-Port-Switch-with-Fiber-Support-DS00003038B.pdf
KSZ8893FQL-FX
Hersteller: Microchip Technology
Description: IC SWITCH ETH 3PORT 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: I2C, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.1V ~ 3.5V
Current - Supply: 120mA
Protocol: Ethernet
Standards: 100 Base-FX PHY, TS-1000, 10/100 Base-T/TX PHY
Supplier Device Package: 128-PQFP (14x20)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.37 EUR
25+14.45 EUR
100+13.99 EUR
Mindestbestellmenge: 2
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MAQ5280YME filehandler.aspx?ddocname=en579058
MAQ5280YME
Hersteller: Microchip Technology
Description: IC REG LDO ADJ 25MA 8SOIC
auf Bestellung 557 Stücke:
Lieferzeit 10-14 Tag (e)
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MIC2230-G4YML-TR MIC2230-Dual-Synchronous-800mA-800mA-Step-Down-DC-DC-Regulator-DS20005748B.pdf
MIC2230-G4YML-TR
Hersteller: Microchip Technology
Description: IC REG BUCK 1.2V/1.8V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 1.8V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2230-GSYML-TR MIC2230-Dual-Synchronous-800mA-800mA-Step-Down-DC-DC-Regulator-DS20005748B.pdf
MIC2230-GSYML-TR
Hersteller: Microchip Technology
Description: IC REG BUCK 1.8V/3.3V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2230-J4YML-TR MIC2230-Dual-Synchronous-800mA-800mA-Step-Down-DC-DC-Regulator-DS20005748B.pdf
MIC2230-J4YML-TR
Hersteller: Microchip Technology
Description: IC REG BUCK 1.2V/2.5V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 2.5V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2230-S4YML-TR MIC2230-Dual-Synchronous-800mA-800mA-Step-Down-DC-DC-Regulator-DS20005748B.pdf
MIC2230-S4YML-TR
Hersteller: Microchip Technology
Description: IC REG BUCK 1.2V/3.3V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 3.3V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2238-G4YML-TR mic2238.pdf
MIC2238-G4YML-TR
Hersteller: Microchip Technology
Description: IC REG BUCK 1.2V/1.8V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 1.8V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2238-GSYML-TR mic2238.pdf
MIC2238-GSYML-TR
Hersteller: Microchip Technology
Description: IC REG BUCK 1.8V/3.3V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Part Status: Active
Produkt ist nicht verfügbar
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MIC2238-J4YML-TR mic2238.pdf
MIC2238-J4YML-TR
Hersteller: Microchip Technology
Description: IC REG BUCK 1.2V/2.5V DL 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.2V, 2.5V
Part Status: Active
Produkt ist nicht verfügbar
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