APTM50AM38FTG Microchip Technology
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Technische Details APTM50AM38FTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 500V; 67A; SP4; Idm: 360A; 694W, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 500V, Drain current: 67A, Case: SP4, Topology: MOSFET half-bridge; NTC thermistor, Electrical mounting: FASTON connectors; screw, On-state resistance: 45mΩ, Pulsed drain current: 360A, Power dissipation: 694W, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM50AM38FTG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM50AM38FTG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 500V; 67A; SP4; Idm: 360A; 694W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 67A Case: SP4 Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 45mΩ Pulsed drain current: 360A Power dissipation: 694W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APTM50AM38FTG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 500V 90A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 694W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
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| APTM50AM38FTG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules DOR CC4003 |
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| APTM50AM38FTG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 67A; SP4; Idm: 360A; 694W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 67A Case: SP4 Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 45mΩ Pulsed drain current: 360A Power dissipation: 694W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |