APTM50HM35FG Microchip Technology

Description: MOSFET 4N-CH 500V 99A SP6, Drain to Source Voltage (Vdss): 500V, Power - Max: 781W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk, Supplier Device Package: SP6, Vgs(th) (Max) @ Id: 5V @ 5mA, Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V, Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 99A.