APTM120UM70DAG Microchip Technology
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Technische Details APTM120UM70DAG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 684A, Semiconductor structure: diode/transistor, Drain-source voltage: 1.2kV, Drain current: 126A, On-state resistance: 80mΩ, Power dissipation: 5kW, Electrical mounting: FASTON connectors; screw, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: single transistor + series diode, Case: SP6C, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM120UM70DAG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM120UM70DAG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 684A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 126A On-state resistance: 80mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120UM70DAG | Hersteller : Microchip Technology | Description: MOSFET N-CH 1200V 171A SP6 |
Produkt ist nicht verfügbar |
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APTM120UM70DAG | Hersteller : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-7-SP6C |
Produkt ist nicht verfügbar |
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APTM120UM70DAG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 684A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 126A On-state resistance: 80mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Case: SP6C |
Produkt ist nicht verfügbar |