
APTM20AM08FTG Microchip Technology
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Technische Details APTM20AM08FTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V, Topology: MOSFET half-bridge; NTC thermistor, Type of semiconductor module: MOSFET transistor, On-state resistance: 10mΩ, Drain current: 155A, Drain-source voltage: 200V, Power dissipation: 781W, Pulsed drain current: 832A, Gate-source voltage: ±30V, Case: SP4, Electrical mounting: FASTON connectors; screw, Semiconductor structure: diode/transistor, Mechanical mounting: screw, Technology: FREDFET; POWER MOS 7®, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM20AM08FTG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM20AM08FTG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V Topology: MOSFET half-bridge; NTC thermistor Type of semiconductor module: MOSFET transistor On-state resistance: 10mΩ Drain current: 155A Drain-source voltage: 200V Power dissipation: 781W Pulsed drain current: 832A Gate-source voltage: ±30V Case: SP4 Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Anzahl je Verpackung: 1 Stücke |
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APTM20AM08FTG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
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APTM20AM08FTG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTM20AM08FTG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V Topology: MOSFET half-bridge; NTC thermistor Type of semiconductor module: MOSFET transistor On-state resistance: 10mΩ Drain current: 155A Drain-source voltage: 200V Power dissipation: 781W Pulsed drain current: 832A Gate-source voltage: ±30V Case: SP4 Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® |
Produkt ist nicht verfügbar |