APTM20UM04SAG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 200V 417A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V
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Technische Details APTM20UM04SAG Microchip Technology
Description: MOSFET N-CH 200V 417A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 417A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 208.5A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28800 pF @ 25 V.
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Verfügbarkeit |
Preis |
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| APTM20UM04SAG | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SP6C |
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| APTM20UM04SAG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Semiconductor module; diode/transistor; 200V; 310A; SP6C; 1.56kW Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 310A Case: SP6C Topology: single transistor + series diode - parrallel diode Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1670A Power dissipation: 1.56kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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