APTM20SKM04G Microchip Technology
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Technische Details APTM20SKM04G Microchip Technology
Description: MOSFET N-CH 200V 372A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 372A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V.
Weitere Produktangebote APTM20SKM04G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM20SKM04G | Hersteller : MICROSEMI |
 SP6/POWER MODULE - MOSFET APTM20SKM04Anzahl je Verpackung: 1 Stücke |
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APTM20SKM04G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 200V 372A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 372A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V |
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| APTM20SKM04G | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SP6C |
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| APTM20SKM04G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Semiconductor module; diode/transistor; 200V; 278A; SP6C; 1.25kW Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 278A Case: SP6C Topology: buck chopper Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1488A Power dissipation: 1.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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