APTM20DUM08TG Microchip Technology
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Technische Details APTM20DUM08TG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor,common source; 200V; 155A; SP4, Type of module: MOSFET transistor, Semiconductor structure: common source; transistor/transistor, Drain-source voltage: 200V, Drain current: 155A, Case: SP4, Topology: MOSFET x2; NTC thermistor, Electrical mounting: FASTON connectors; screw, On-state resistance: 10mΩ, Pulsed drain current: 832A, Power dissipation: 781W, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM20DUM08TG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM20DUM08TG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor,common source; 200V; 155A; SP4 Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 155A Case: SP4 Topology: MOSFET x2; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| APTM20DUM08TG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 200V 208A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 Part Status: Active |
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| APTM20DUM08TG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules DOR CC4087 |
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| APTM20DUM08TG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 200V; 155A; SP4 Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 155A Case: SP4 Topology: MOSFET x2; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |