Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276106) > Seite 467 nach 4602
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| APTGT50SK120TG | Microchip Technology |
 Description: IGBT MODULE 1200V 75A 277W SP4Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A IGBT Type: Trench Field Stop Supplier Device Package: SP4 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SP4 Packaging: Bulk Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 277 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTGT50SK170T1G | Microchip Technology |
Description: IGBT MODULE 1700V 75A 312W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 17 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTGT50SK170TG | Microchip Technology |
Description: IGBT MODULE 1700V 75A 312W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTGT50TA60PG | Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTGT50TDU170PG | Microchip Technology |
Description: IGBT MODULE 1700V 70A 310W SP6P Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Triple, Dual - Common Source Input: Standard Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 310 W Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 70 A IGBT Type: Trench Field Stop Supplier Device Package: SP6-P NTC Thermistor: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTGT50TDU60PG | Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTGT50X60T3G | Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTGT600A60G | Microchip Technology |
Description: IGBT MODULE 600V 700A 2300W SP6 Input Capacitance (Cies) @ Vce: 49 nF @ 25 V Current - Collector Cutoff (Max): 750 µA Power - Max: 2300 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 700 A IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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| APTGT600DA60G | Microchip Technology |
Description: IGBT MODULE 600V 700A 2300W SP6 Input Capacitance (Cies) @ Vce: 49 nF @ 25 V Current - Collector Cutoff (Max): 750 µA Power - Max: 2300 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 700 A IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTGT600DU60G | Microchip Technology |
Description: IGBT MODULE 600V 700A 2300W SP6 Input Capacitance (Cies) @ Vce: 49 nF @ 25 V Current - Collector Cutoff (Max): 750 µA Power - Max: 2300 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 700 A IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Dual, Common Source Input: Standard Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTGT600SK60G | Microchip Technology |
Description: IGBT MODULE 600V 700A 2300W SP6 Input Capacitance (Cies) @ Vce: 49 nF @ 25 V Current - Collector Cutoff (Max): 750 µA Power - Max: 2300 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 700 A IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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APTGT600U120D4G | Microchip Technology |
Description: IGBT MODULE 1200V 900A 2500W D4 Input: Standard Mounting Type: Chassis Mount Package / Case: D4 Packaging: Bulk Input Capacitance (Cies) @ Vce: 40 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 2500 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 900 A IGBT Type: Trench Field Stop Supplier Device Package: D4 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APTGT600U170D4G | Microchip Technology |
Description: IGBT MODULE 1700V 1100A 2900W D4 Power - Max: 2900 W Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 1100 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: D4 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: D4 Packaging: Bulk Input Capacitance (Cies) @ Vce: 51 nF @ 25 V Current - Collector Cutoff (Max): 1 mA |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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| APTGT750U60D4G | Microchip Technology |
Description: IGBT MODULE 600V 1000A 2300W D4 Mounting Type: Chassis Mount Package / Case: D4 Packaging: Bulk Input Capacitance (Cies) @ Vce: 49 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 2300 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 1000 A IGBT Type: Trench Field Stop Supplier Device Package: D4 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 800A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Single Input: Standard |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTGT75A60T1G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP1 Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A IGBT Type: Trench Field Stop Supplier Device Package: SP1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 19 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTGT75DA120TG | Microchip Technology |
Description: IGBT MODULE 1200V 110A 357W SP4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTGT75DA60T1G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP1 Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: SP1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 16 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTGT75DDA60T3G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP3 Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Dual Boost Chopper Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 17 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTGT75H60T1G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP1 Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A IGBT Type: Trench Field Stop Supplier Device Package: SP1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Full Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTGT75H60T3G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP3 Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Full Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTGT75TA120PG | Microchip Technology |
Description: IGBT MODULE 1200V 100A 350W SP6P Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 350 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A IGBT Type: Trench Field Stop Supplier Device Package: SP6-P NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Input: Standard Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTGT75TDU120PG | Microchip Technology |
Description: IGBT MODULE 1200V 100A 350W SP6P Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 350 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A IGBT Type: Trench Field Stop Supplier Device Package: SP6-P NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Configuration: Triple, Dual - Common Source Input: Standard Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTGT75TDU60PG | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP6P Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A IGBT Type: Trench Field Stop Supplier Device Package: SP6-P NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Triple, Dual - Common Source Input: Standard Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTGT75X60T3G | Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP3 Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 11 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTM100A13SCG | Microchip Technology |
Description: MOSFET 2N-CH 1000V 65A SP6 Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Current - Continuous Drain (Id) @ 25°C: 65A Drain to Source Voltage (Vdss): 1000V (1kV) Power - Max: 1250W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| APTM100A23STG | Microchip Technology |
Description: MOSFET 2N-CH 1000V 36A SP4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTM100AM90FG | Microchip Technology |
Description: MOSFET 2N-CH 1000V 78A SP6 Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Current - Continuous Drain (Id) @ 25°C: 78A Drain to Source Voltage (Vdss): 1000V (1kV) Power - Max: 1250W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTM100DAM90G | Microchip Technology |
Description: MOSFET N-CH 1000V 78A SP6 Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 5V @ 10mA Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM100DSK35T3G | Microchip Technology |
Description: MOSFET 2N-CH 1000V 22A SP3 Supplier Device Package: SP3 Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Current - Continuous Drain (Id) @ 25°C: 22A Drain to Source Voltage (Vdss): 1000V (1kV) Power - Max: 390W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM100H35FT3G | Microchip Technology |
Description: MOSFET 4N-CH 1000V 22A SP3 Supplier Device Package: SP3 Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Current - Continuous Drain (Id) @ 25°C: 22A Drain to Source Voltage (Vdss): 1000V (1kV) Power - Max: 390W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM100H35FTG | Microchip Technology |
Description: MOSFET 4N-CH 1000V 22A SP4 Supplier Device Package: SP4 Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Current - Continuous Drain (Id) @ 25°C: 22A Drain to Source Voltage (Vdss): 1000V (1kV) Power - Max: 390W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP4 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTM100H45SCTG | Microchip Technology |
Description: MOSFET 4N-CH 1000V 18A SP4 Part Status: Active Supplier Device Package: SP4 Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A Drain to Source Voltage (Vdss): 1000V (1kV) Power - Max: 357W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP4 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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APTM100H45STG | Microchip Technology |
Description: MOSFET 4N-CH 1000V 18A SP4 |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
| APTM100SK33T1G | Microchip Technology |
Description: MOSFET N-CH 1000V 23A SP1 Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP1 Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 19 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTM100TA35FPG | Microchip Technology |
Description: MOSFET 6N-CH 1000V 22A SP6-P Supplier Device Package: SP6-P Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Current - Continuous Drain (Id) @ 25°C: 22A Drain to Source Voltage (Vdss): 1000V (1kV) Power - Max: 390W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTM100UM45DAG | Microchip Technology |
Description: MOSFET N-CH 1000V 215A SP6 Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 5V @ 30mA Power Dissipation (Max): 5000W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V Current - Continuous Drain (Id) @ 25°C: 215A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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APTM100UM45FAG | Microchip Technology |
Description: MOSFET N-CH 1000V 215A SP6 Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 5V @ 30mA Power Dissipation (Max): 5000W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V Current - Continuous Drain (Id) @ 25°C: 215A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTM100UM60FAG | Microchip Technology |
Description: MOSFET N-CH 1000V 129A SP6 Input Capacitance (Ciss) (Max) @ Vds: 31100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1116 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 5V @ 15mA Power Dissipation (Max): 2272W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 64.5A, 10V Current - Continuous Drain (Id) @ 25°C: 129A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM100UM65DAG | Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 5V @ 20mA Power Dissipation (Max): 3250W (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTM100UM65SAG | Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 5V @ 20mA Power Dissipation (Max): 3250W (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APTM10AM02FG | Microchip Technology |
Description: MOSFET 2N-CH 100V 495A SP6 Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Current - Continuous Drain (Id) @ 25°C: 495A Drain to Source Voltage (Vdss): 100V Power - Max: 1250W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| APTM10DAM02G | Microchip Technology |
Description: MOSFET N-CH 100V 495A SP6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM10DSKM09T3G | Microchip Technology |
Description: MOSFET 2N-CH 100V 139A SP3 Package / Case: SP3 Packaging: Bulk Supplier Device Package: SP3 Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Current - Continuous Drain (Id) @ 25°C: 139A Drain to Source Voltage (Vdss): 100V Power - Max: 390W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM10DSKM19T3G | Microchip Technology |
Description: MOSFET 2N-CH 100V 70A SP3 Supplier Device Package: SP3 Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Current - Continuous Drain (Id) @ 25°C: 70A Drain to Source Voltage (Vdss): 100V Power - Max: 208W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 19 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM10DUM02G | Microchip Technology |
Description: MOSFET 2N-CH 100V 495A SP6 Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Current - Continuous Drain (Id) @ 25°C: 495A Drain to Source Voltage (Vdss): 100V Power - Max: 1250W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTM10HM05FG | Microchip Technology |
Description: MOSFET 4N-CH 100V 278A SP6 Supplier Device Package: SP6 Packaging: Bulk Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Current - Continuous Drain (Id) @ 25°C: 278A Drain to Source Voltage (Vdss): 100V Power - Max: 780W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| APTM10HM09FT3G | Microchip Technology |
Description: MOSFET 4N-CH 100V 139A SP3 Power - Max: 390W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk Supplier Device Package: SP3 Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Current - Continuous Drain (Id) @ 25°C: 139A Drain to Source Voltage (Vdss): 100V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTM10HM19FT3G | Microchip Technology |
Description: MOSFET 4N-CH 100V 70A SP3 Supplier Device Package: SP3 Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Current - Continuous Drain (Id) @ 25°C: 70A Drain to Source Voltage (Vdss): 100V Power - Max: 208W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| APTM10SKM02G | Microchip Technology |
Description: MOSFET N-CH 100V 495A SP6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM10SKM05TG | Microchip Technology |
Description: MOSFET N-CH 100V 278A SP4 Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP4 Vgs(th) (Max) @ Id: 4V @ 5mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V Current - Continuous Drain (Id) @ 25°C: 278A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTM10TAM09FPG | Microchip Technology |
Description: MOSFET 6N-CH 100V 139A SP6-P Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Current - Continuous Drain (Id) @ 25°C: 139A Drain to Source Voltage (Vdss): 100V Power - Max: 390W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk Supplier Device Package: SP6-P Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTM10UM01FAG | Microchip Technology |
Description: MOSFET N-CH 100V 860A SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 4V @ 12mA Power Dissipation (Max): 2500W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V Current - Continuous Drain (Id) @ 25°C: 860A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
| APTM10UM02FAG | Microchip Technology |
Description: MOSFET N-CH 100V 570A SP6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM120A15FG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 60A SP6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM120A20DG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 50A SP6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM120A20SG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 50A SP6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM120A29FTG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 34A SP4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
| APTM120DA30T1G | Microchip Technology |
Description: MOSFET N-CH 1200V 31A SP1 Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SP1 Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 657W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||
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APTM120DU15G | Microchip Technology |
Description: MOSFET 2N-CH 1200V 60A SP6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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APTM120H140FT1G | Microchip Technology |
Description: MOSFET 4N-CH 1200V 8A SP1 Supplier Device Package: SP1 Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 208W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTGT50SK120TG |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 75A 277W SP4
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP4
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 277 W
Description: IGBT MODULE 1200V 75A 277W SP4
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP4
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 277 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT50SK170T1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1700V 75A 312W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1700V 75A 312W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT50SK170TG |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1700V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT50TA60PG |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT50TDU170PG |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1700V 70A 310W SP6P
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 310 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 70 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Description: IGBT MODULE 1700V 70A 310W SP6P
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 310 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 70 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT50TDU60PG |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT50X60T3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Produkt ist nicht verfügbar
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| APTGT600A60G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 700A 2300W SP6
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 2300 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 700 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 600V 700A 2300W SP6
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 2300 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 700 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 386.41 EUR |
| APTGT600DA60G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 700A 2300W SP6
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 2300 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 700 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 600V 700A 2300W SP6
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 2300 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 700 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT600DU60G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 700A 2300W SP6
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 2300 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 700 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual, Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 600V 700A 2300W SP6
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 2300 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 700 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual, Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT600SK60G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 700A 2300W SP6
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 2300 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 700 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 600V 700A 2300W SP6
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 2300 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 700 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 396.9 EUR |
| 25+ | 283.5 EUR |
| APTGT600U120D4G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 900A 2500W D4
Input: Standard
Mounting Type: Chassis Mount
Package / Case: D4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
IGBT Type: Trench Field Stop
Supplier Device Package: D4
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Description: IGBT MODULE 1200V 900A 2500W D4
Input: Standard
Mounting Type: Chassis Mount
Package / Case: D4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
IGBT Type: Trench Field Stop
Supplier Device Package: D4
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Produkt ist nicht verfügbar
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| APTGT600U170D4G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1700V 1100A 2900W D4
Power - Max: 2900 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: D4
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: D4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Description: IGBT MODULE 1700V 1100A 2900W D4
Power - Max: 2900 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: D4
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: D4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 426.8 EUR |
| APTGT750U60D4G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 1000A 2300W D4
Mounting Type: Chassis Mount
Package / Case: D4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 2300 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 1000 A
IGBT Type: Trench Field Stop
Supplier Device Package: D4
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 800A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Description: IGBT MODULE 600V 1000A 2300W D4
Mounting Type: Chassis Mount
Package / Case: D4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 2300 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 1000 A
IGBT Type: Trench Field Stop
Supplier Device Package: D4
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 800A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Produkt ist nicht verfügbar
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| APTGT75A60T1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Description: IGBT MODULE 600V 100A 250W SP1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT75DA120TG |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 110A 357W SP4
Description: IGBT MODULE 1200V 110A 357W SP4
Produkt ist nicht verfügbar
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| APTGT75DA60T1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Description: IGBT MODULE 600V 100A 250W SP1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT75DDA60T3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual Boost Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: IGBT MODULE 600V 100A 250W SP3
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual Boost Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT75H60T1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Description: IGBT MODULE 600V 100A 250W SP1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT75H60T3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: IGBT MODULE 600V 100A 250W SP3
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT75TA120PG |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 100A 350W SP6P
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 1200V 100A 350W SP6P
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT75TDU120PG |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 100A 350W SP6P
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 1200V 100A 350W SP6P
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT75TDU60PG |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP6P
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 600V 100A 250W SP6P
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTGT75X60T3G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: IGBT MODULE 600V 100A 250W SP3
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTM100A13SCG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 65A SP6
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 65A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Description: MOSFET 2N-CH 1000V 65A SP6
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 65A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 391.25 EUR |
| APTM100A23STG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 36A SP4
Description: MOSFET 2N-CH 1000V 36A SP4
Produkt ist nicht verfügbar
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| APTM100AM90FG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 78A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 78A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET 2N-CH 1000V 78A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 78A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
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| APTM100DAM90G |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 78A SP6
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET N-CH 1000V 78A SP6
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTM100DSK35T3G |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 22A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: MOSFET 2N-CH 1000V 22A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
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| APTM100H35FT3G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 22A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: MOSFET 4N-CH 1000V 22A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
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| APTM100H35FTG |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 22A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Description: MOSFET 4N-CH 1000V 22A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
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| APTM100H45SCTG |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
Part Status: Active
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 357W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Description: MOSFET 4N-CH 1000V 18A SP4
Part Status: Active
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 357W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 355.29 EUR |
| APTM100H45STG |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
Description: MOSFET 4N-CH 1000V 18A SP4
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| APTM100SK33T1G |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 23A SP1
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Description: MOSFET N-CH 1000V 23A SP1
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 19 Stücke
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| APTM100TA35FPG |
|
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 1000V 22A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET 6N-CH 1000V 22A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
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| APTM100UM45DAG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 30mA
Power Dissipation (Max): 5000W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET N-CH 1000V 215A SP6
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 30mA
Power Dissipation (Max): 5000W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 486.06 EUR |
| APTM100UM45FAG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 30mA
Power Dissipation (Max): 5000W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET N-CH 1000V 215A SP6
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 30mA
Power Dissipation (Max): 5000W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTM100UM60FAG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 129A SP6
Input Capacitance (Ciss) (Max) @ Vds: 31100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1116 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 15mA
Power Dissipation (Max): 2272W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 64.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET N-CH 1000V 129A SP6
Input Capacitance (Ciss) (Max) @ Vds: 31100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1116 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 15mA
Power Dissipation (Max): 2272W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 64.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
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| APTM100UM65DAG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3250W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET N-CH 1000V 145A SP6
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3250W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTM100UM65SAG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3250W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET N-CH 1000V 145A SP6
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3250W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTM10AM02FG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Description: MOSFET 2N-CH 100V 495A SP6
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTM10DAM02G |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 495A SP6
Description: MOSFET N-CH 100V 495A SP6
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| APTM10DSKM09T3G |
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 139A SP3
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Description: MOSFET 2N-CH 100V 139A SP3
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
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| APTM10DSKM19T3G |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 70A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: MOSFET 2N-CH 100V 70A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTM10DUM02G |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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| APTM10HM05FG |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 100V 278A SP6
Supplier Device Package: SP6
Packaging: Bulk
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
Power - Max: 780W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Description: MOSFET 4N-CH 100V 278A SP6
Supplier Device Package: SP6
Packaging: Bulk
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
Power - Max: 780W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
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| APTM10HM09FT3G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 100V 139A SP3
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
Description: MOSFET 4N-CH 100V 139A SP3
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
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| APTM10HM19FT3G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 100V 70A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Description: MOSFET 4N-CH 100V 70A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTM10SKM02G |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 495A SP6
Description: MOSFET N-CH 100V 495A SP6
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| APTM10SKM05TG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 278A SP4
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Description: MOSFET N-CH 100V 278A SP4
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTM10TAM09FPG |
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 100V 139A SP6-P
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Description: MOSFET 6N-CH 100V 139A SP6-P
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 4V @ 2.5mA
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| APTM10UM01FAG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 860A SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 12mA
Power Dissipation (Max): 2500W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Description: MOSFET N-CH 100V 860A SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 12mA
Power Dissipation (Max): 2500W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
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| APTM10UM02FAG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 570A SP6
Description: MOSFET N-CH 100V 570A SP6
Produkt ist nicht verfügbar
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| APTM120A15FG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 60A SP6
Description: MOSFET 2N-CH 1200V 60A SP6
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| APTM120A20DG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 50A SP6
Description: MOSFET 2N-CH 1200V 50A SP6
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| APTM120A20SG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 50A SP6
Description: MOSFET 2N-CH 1200V 50A SP6
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| APTM120A29FTG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 34A SP4
Description: MOSFET 2N-CH 1200V 34A SP4
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| APTM120DA30T1G |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 657W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Description: MOSFET N-CH 1200V 31A SP1
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 657W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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| APTM120DU15G |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 60A SP6
Description: MOSFET 2N-CH 1200V 60A SP6
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| APTM120H140FT1G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1200V 8A SP1
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Description: MOSFET 4N-CH 1200V 8A SP1
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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