APTM120A20DG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw, On-state resistance: 0.24Ω, Drain current: 37A, Drain-source voltage: 1.2kV, Semiconductor structure: diode/transistor, Power dissipation: 1.25kW, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Case: SP6C, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes, Pulsed drain current: 200A, Type of semiconductor module: MOSFET transistor, Anzahl je Verpackung: 1 Stücke.