APTM10TAM09FPG Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 100V 139A SP6-P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP6-P
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Technische Details APTM10TAM09FPG Microchip Technology
Description: MOSFET 6N-CH 100V 139A SP6-P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 139A, Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: SP6-P.
Weitere Produktangebote APTM10TAM09FPG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APTM10TAM09FPG | MICROCHIP TECHNOLOGY |
Category: Transistor modules Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 100A Case: SP6P Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 430A Power dissipation: 390W Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Topology: MOSFET x3 half-bridge |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTM10TAM09FPG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
Case: SP6P
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Topology: MOSFET x3 half-bridge
Category: Transistor modules
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
Case: SP6P
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Topology: MOSFET x3 half-bridge
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH