APTM10TAM09FPG Microchip Technology
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Technische Details APTM10TAM09FPG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 100V, Drain current: 100A, Topology: MOSFET x3 half-bridge, Electrical mounting: Press-in PCB, On-state resistance: 10mΩ, Pulsed drain current: 430A, Power dissipation: 390W, Technology: FREDFET; POWER MOS 5®, Gate-source voltage: ±30V, Mechanical mounting: screw, Case: SP6P, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM10TAM09FPG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM10TAM09FPG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 100A Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 430A Power dissipation: 390W Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Case: SP6P Anzahl je Verpackung: 1 Stücke |
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APTM10TAM09FPG | Hersteller : Microchip Technology |
Description: MOSFET 6N-CH 100V 139A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SP6-P |
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| APTM10TAM09FPG | Hersteller : Microchip Technology | Discrete Semiconductor Modules DOR CC6509 |
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| APTM10TAM09FPG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 100A Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 430A Power dissipation: 390W Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Case: SP6P |
Produkt ist nicht verfügbar |