APTM10DSKM19T3G Microchip Technology
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Technische Details APTM10DSKM19T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A, Type of module: MOSFET transistor, Semiconductor structure: diode/transistor, Topology: buck chopper x2; NTC thermistor, Case: SP3, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: POWER MOS 5®, Gate-source voltage: ±30V, Drain-source voltage: 100V, Pulsed drain current: 300A, On-state resistance: 21mΩ, Drain current: 50A, Power dissipation: 208W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM10DSKM19T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM10DSKM19T3G | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper x2; NTC thermistor Case: SP3 Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Drain-source voltage: 100V Pulsed drain current: 300A On-state resistance: 21mΩ Drain current: 50A Power dissipation: 208W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10DSKM19T3G | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 100V 70A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SP3 |
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| APTM10DSKM19T3G | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-5-SP3 |
Produkt ist nicht verfügbar |
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| APTM10DSKM19T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper x2; NTC thermistor Case: SP3 Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Drain-source voltage: 100V Pulsed drain current: 300A On-state resistance: 21mΩ Drain current: 50A Power dissipation: 208W |
Produkt ist nicht verfügbar |