APTM10HM05FG Microchip Technology
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Technische Details APTM10HM05FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 100V; 207A; SP6C; Idm: 1100A; 780W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 100V, Drain current: 207A, Case: SP6C, Topology: H-bridge, Electrical mounting: FASTON connectors; screw, On-state resistance: 5mΩ, Technology: FREDFET; POWER MOS 5®, Gate-source voltage: ±30V, Mechanical mounting: screw, Power dissipation: 780W, Pulsed drain current: 1100A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM10HM05FG
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APTM10HM05FG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 100V; 207A; SP6C; Idm: 1100A; 780W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 207A Case: SP6C Topology: H-bridge Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Power dissipation: 780W Pulsed drain current: 1100A Anzahl je Verpackung: 1 Stücke |
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APTM10HM05FG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 780W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 278A Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: SP6 |
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APTM10HM05FG | Hersteller : Microchip / Microsemi |
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APTM10HM05FG | Hersteller : Microchip Technology |
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APTM10HM05FG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 100V; 207A; SP6C; Idm: 1100A; 780W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 207A Case: SP6C Topology: H-bridge Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Power dissipation: 780W Pulsed drain current: 1100A |
Produkt ist nicht verfügbar |