
APTM100TA35FPG Microchip Technology
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Technische Details APTM100TA35FPG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Case: SP6P, Electrical mounting: Press-in PCB, Mechanical mounting: screw, On-state resistance: 0.42Ω, Topology: MOSFET x3 half-bridge, Drain current: 17A, Gate-source voltage: ±30V, Pulsed drain current: 88A, Technology: FREDFET; POWER MOS 7®, Power dissipation: 390W, Drain-source voltage: 1kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100TA35FPG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM100TA35FPG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP6P Electrical mounting: Press-in PCB Mechanical mounting: screw On-state resistance: 0.42Ω Topology: MOSFET x3 half-bridge Drain current: 17A Gate-source voltage: ±30V Pulsed drain current: 88A Technology: FREDFET; POWER MOS 7® Power dissipation: 390W Drain-source voltage: 1kV Anzahl je Verpackung: 1 Stücke |
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APTM100TA35FPG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP6-P |
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APTM100TA35FPG | Hersteller : Microchip / Microsemi |
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APTM100TA35FPG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTM100TA35FPG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP6P Electrical mounting: Press-in PCB Mechanical mounting: screw On-state resistance: 0.42Ω Topology: MOSFET x3 half-bridge Drain current: 17A Gate-source voltage: ±30V Pulsed drain current: 88A Technology: FREDFET; POWER MOS 7® Power dissipation: 390W Drain-source voltage: 1kV |
Produkt ist nicht verfügbar |