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APTM10HM09FT3G Microchip Technology


High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 100V 139A SP3
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
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Technische Details APTM10HM09FT3G Microchip Technology

Description: MOSFET 4N-CH 100V 139A SP3, Power - Max: 390W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: SP3, Packaging: Bulk, Supplier Device Package: SP3, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V, Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 139A, Drain to Source Voltage (Vdss): 100V.

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APTM10HM09FT3G Hersteller : Microchip / Microsemi High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Discrete Semiconductor Modules CC3027
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APTM10HM09FT3G Hersteller : Microchip Technology APTM10HM09FT3G_Rev3-3445168.pdf MOSFET Modules PM-MOSFET-FREDFET-5-SP3F
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