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APTM10HM09FT3G

APTM10HM09FT3G Microchip Technology


4008866090886838055-aptm10hm09ft3g-rev2-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 100V 139A 32-Pin Case SP-3 Tube
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Technische Details APTM10HM09FT3G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 100V, Drain current: 100A, Topology: H-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 10mΩ, Pulsed drain current: 430A, Power dissipation: 390W, Technology: FREDFET; POWER MOS 5®, Gate-source voltage: ±30V, Mechanical mounting: screw, Case: SP3F, Anzahl je Verpackung: 1 Stücke.

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APTM10HM09FT3G Hersteller : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Case: SP3F
Anzahl je Verpackung: 1 Stücke
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APTM10HM09FT3G Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
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APTM10HM09FT3G Hersteller : Microchip / Microsemi High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Discrete Semiconductor Modules CC3027
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APTM10HM09FT3G Hersteller : Microchip Technology APTM10HM09FT3G_Rev3-3445168.pdf MOSFET Modules PM-MOSFET-FREDFET-5-SP3F
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APTM10HM09FT3G Hersteller : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Case: SP3F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH