
APTM10HM09FT3G Microchip Technology
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Technische Details APTM10HM09FT3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB, Case: SP3F, Electrical mounting: Press-in PCB, Technology: FREDFET; POWER MOS 5®, Topology: H-bridge; NTC thermistor, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, On-state resistance: 10mΩ, Gate-source voltage: ±30V, Drain current: 100A, Drain-source voltage: 100V, Power dissipation: 390W, Pulsed drain current: 430A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM10HM09FT3G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM10HM09FT3G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Case: SP3F Electrical mounting: Press-in PCB Technology: FREDFET; POWER MOS 5® Topology: H-bridge; NTC thermistor Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Semiconductor structure: transistor/transistor On-state resistance: 10mΩ Gate-source voltage: ±30V Drain current: 100A Drain-source voltage: 100V Power dissipation: 390W Pulsed drain current: 430A Anzahl je Verpackung: 1 Stücke |
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APTM10HM09FT3G | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SP3 |
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APTM10HM09FT3G | Hersteller : Microchip / Microsemi |
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APTM10HM09FT3G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTM10HM09FT3G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Case: SP3F Electrical mounting: Press-in PCB Technology: FREDFET; POWER MOS 5® Topology: H-bridge; NTC thermistor Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Semiconductor structure: transistor/transistor On-state resistance: 10mΩ Gate-source voltage: ±30V Drain current: 100A Drain-source voltage: 100V Power dissipation: 390W Pulsed drain current: 430A |
Produkt ist nicht verfügbar |