Technische Details APTM10AM02FG Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6, Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 495A, Drain to Source Voltage (Vdss): 100V, Power - Max: 1250W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk, Supplier Device Package: SP6, Vgs(th) (Max) @ Id: 4V @ 10mA, Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V.
Weitere Produktangebote APTM10AM02FG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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APTM10AM02FG | Microchip Technology |
 Description: MOSFET 2N-CH 100V 495A SP6Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Current - Continuous Drain (Id) @ 25°C: 495A Drain to Source Voltage (Vdss): 100V Power - Max: 1250W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk Supplier Device Package: SP6 Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APTM10AM02FG | Microchip / Microsemi |
Discrete Semiconductor Modules CC6034 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTM10AM02FG |
|
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Description: MOSFET 2N-CH 100V 495A SP6
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTM10AM02FG |
|
Hersteller: Microchip / Microsemi
Discrete Semiconductor Modules CC6034
Discrete Semiconductor Modules CC6034
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH