
APTM20HM16FTG Microchip Technology
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Technische Details APTM20HM16FTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 200V; 77A; SP4; Idm: 416A; 390W, Case: SP4, Semiconductor structure: transistor/transistor, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, On-state resistance: 19mΩ, Power dissipation: 390W, Gate-source voltage: ±30V, Drain current: 77A, Pulsed drain current: 416A, Drain-source voltage: 200V, Topology: H-bridge; NTC thermistor, Technology: FREDFET; POWER MOS 7®, Electrical mounting: FASTON connectors; screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM20HM16FTG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM20HM16FTG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 200V; 77A; SP4; Idm: 416A; 390W Case: SP4 Semiconductor structure: transistor/transistor Type of semiconductor module: MOSFET transistor Mechanical mounting: screw On-state resistance: 19mΩ Power dissipation: 390W Gate-source voltage: ±30V Drain current: 77A Pulsed drain current: 416A Drain-source voltage: 200V Topology: H-bridge; NTC thermistor Technology: FREDFET; POWER MOS 7® Electrical mounting: FASTON connectors; screw Anzahl je Verpackung: 1 Stücke |
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APTM20HM16FTG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 |
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APTM20HM16FTG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTM20HM16FTG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 200V; 77A; SP4; Idm: 416A; 390W Case: SP4 Semiconductor structure: transistor/transistor Type of semiconductor module: MOSFET transistor Mechanical mounting: screw On-state resistance: 19mΩ Power dissipation: 390W Gate-source voltage: ±30V Drain current: 77A Pulsed drain current: 416A Drain-source voltage: 200V Topology: H-bridge; NTC thermistor Technology: FREDFET; POWER MOS 7® Electrical mounting: FASTON connectors; screw |
Produkt ist nicht verfügbar |