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APTGT75TDU120PG APTGT75TDU120PG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1200V 100A 350W SP6P
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTGT75TDU60PG Microchip Technology APTGT75TDU60PG-Rev1.pdf Description: IGBT MODULE 600V 100A 250W SP6P
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTGT75X60T3G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7974 Description: IGBT MODULE 600V 100A 250W SP3
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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APTM100A13SCG APTM100A13SCG Microchip Technology APTM100A13SCG-Rev4.pdf Description: MOSFET 2N-CH 1000V 65A SP6
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 65A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
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APTM100A23STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=7995 Description: MOSFET 2N-CH 1000V 36A SP4
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APTM100AM90FG APTM100AM90FG Microchip Technology APTM100AM90FG-Rev3.pdf Description: MOSFET 2N-CH 1000V 78A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 78A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM100DAM90G Microchip Technology 8004-aptm100dam90g-datasheet Description: MOSFET N-CH 1000V 78A SP6
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM100DSK35T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 1000V 22A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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APTM100H35FT3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 1000V 22A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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APTM100H35FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 1000V 22A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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APTM100H45SCTG APTM100H45SCTG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8014 Description: MOSFET 4N-CH 1000V 18A SP4
Part Status: Active
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 357W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
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APTM100H45STG APTM100H45STG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8015 Description: MOSFET 4N-CH 1000V 18A SP4
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APTM100SK33T1G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 23A SP1
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
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APTM100TA35FPG APTM100TA35FPG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 6N-CH 1000V 22A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM100UM45DAG APTM100UM45DAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 215A SP6
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 30mA
Power Dissipation (Max): 5000W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM100UM45FAG APTM100UM45FAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 215A SP6
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 30mA
Power Dissipation (Max): 5000W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM100UM60FAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 129A SP6
Input Capacitance (Ciss) (Max) @ Vds: 31100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1116 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 15mA
Power Dissipation (Max): 2272W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 64.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM100UM65DAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 145A SP6
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3250W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM100UM65SAG APTM100UM65SAG Microchip Technology 8037-aptm100um65sag-datasheet Description: MOSFET N-CH 1000V 145A SP6
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3250W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM10AM02FG APTM10AM02FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 100V 495A SP6
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
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APTM10DAM02G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8042 Description: MOSFET N-CH 100V 495A SP6
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APTM10DSKM09T3G Microchip Technology Description: MOSFET 2N-CH 100V 139A SP3
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
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APTM10DSKM19T3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 100V 70A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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APTM10DUM02G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM10HM05FG APTM10HM05FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 100V 278A SP6
Supplier Device Package: SP6
Packaging: Bulk
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
Power - Max: 780W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
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APTM10HM09FT3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 100V 139A SP3
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
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APTM10HM19FT3G APTM10HM19FT3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 100V 70A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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APTM10SKM02G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8058 Description: MOSFET N-CH 100V 495A SP6
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APTM10SKM05TG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 100V 278A SP4
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
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APTM10TAM09FPG APTM10TAM09FPG Microchip Technology Description: MOSFET 6N-CH 100V 139A SP6-P
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 4V @ 2.5mA
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APTM10UM01FAG APTM10UM01FAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 100V 860A SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 12mA
Power Dissipation (Max): 2500W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
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APTM10UM02FAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8065 Description: MOSFET N-CH 100V 570A SP6
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APTM120A15FG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8066 Description: MOSFET 2N-CH 1200V 60A SP6
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APTM120A20DG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8067 Description: MOSFET 2N-CH 1200V 50A SP6
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APTM120A20SG Microchip Technology 8068-aptm120a20sg-datasheet Description: MOSFET 2N-CH 1200V 50A SP6
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APTM120A29FTG Microchip Technology 8069-aptm120a29ftg-datasheet Description: MOSFET 2N-CH 1200V 34A SP4
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APTM120DA30T1G Microchip Technology 8075-aptm120da30t1g-datasheet Description: MOSFET N-CH 1200V 31A SP1
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 657W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
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APTM120DU15G APTM120DU15G Microchip Technology index.php?option=com_docman&task=doc_download&gid=8080 Description: MOSFET 2N-CH 1200V 60A SP6
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APTM120H140FT1G APTM120H140FT1G Microchip Technology 8082-aptm120h140ft1g-datasheet Description: MOSFET 4N-CH 1200V 8A SP1
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
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APTM120H29FG APTM120H29FG Microchip Technology APTM120H29FG-Rev2.pdf Description: MOSFET 4N-CH 1200V 34A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 34A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 780W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM120U10SAG APTM120U10SAG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1200V 116A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3290W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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APTM120UM70DAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8101 Description: MOSFET N-CH 1200V 171A SP6
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APTM120UM70FAG Microchip Technology index.php?option=com_docman&task=doc_download&gid=8103 Description: MOSFET N-CH 1200V 171A SP6
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APTM20AM04FG APTM20AM04FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 372A SP6
Drain to Source Voltage (Vdss): 200V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Part Status: Active
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 372A
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APTM20AM05FG Microchip Technology APTM20AM05F.pdf Description: MOSFET 2N-CH 200V 317A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 317A
Drain to Source Voltage (Vdss): 200V
Power - Max: 1136W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM20AM06SG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 300A SP6
Part Status: Active
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 300A
Drain to Source Voltage (Vdss): 200V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM20AM08FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM20AM10FTG Microchip Technology APTM20AM10FTG-Rev3.pdf Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM20AM10STG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM20DAM04G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
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APTM20DAM05G APTM20DAM05G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
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APTM20DAM08TG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTM20DUM04G APTM20DUM04G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM20DUM05G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM20DUM08TG Microchip Technology 8130-aptm20dum08tg-datasheet Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
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APTM20HM08FG APTM20HM08FG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 200V 208A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM20HM10FG Microchip Technology APTM20HM10FG-Rev3.pdf Description: MOSFET 4N-CH 200V 175A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
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APTM20HM16FTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 200V 104A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM20HM20FTG Microchip Technology APTM20HM20FTG-Rev4.pdf Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM20HM20STG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTGT75TDU120PG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTGT75TDU120PG
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 100A 350W SP6P
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTGT75TDU60PG APTGT75TDU60PG-Rev1.pdf
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP6P
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6-P
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Triple, Dual - Common Source
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTGT75X60T3G index.php?option=com_docman&task=doc_download&gid=7974
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP3
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100A13SCG APTM100A13SCG-Rev4.pdf
APTM100A13SCG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 65A SP6
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 65A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
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APTM100A23STG index.php?option=com_docman&task=doc_download&gid=7995
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 36A SP4
Produkt ist nicht verfügbar
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APTM100AM90FG APTM100AM90FG-Rev3.pdf
APTM100AM90FG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 78A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 78A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100DAM90G 8004-aptm100dam90g-datasheet
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 78A SP6
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100DSK35T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1000V 22A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100H35FT3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 22A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100H35FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 22A SP4
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100H45SCTG index.php?option=com_docman&task=doc_download&gid=8014
APTM100H45SCTG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
Part Status: Active
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 357W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
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APTM100H45STG index.php?option=com_docman&task=doc_download&gid=8015
APTM100H45STG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
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APTM100SK33T1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 23A SP1
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100TA35FPG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM100TA35FPG
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 1000V 22A SP6-P
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100UM45DAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM100UM45DAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 30mA
Power Dissipation (Max): 5000W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
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APTM100UM45FAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM100UM45FAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 30mA
Power Dissipation (Max): 5000W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100UM60FAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 129A SP6
Input Capacitance (Ciss) (Max) @ Vds: 31100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1116 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 15mA
Power Dissipation (Max): 2272W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 64.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100UM65DAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3250W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM100UM65SAG 8037-aptm100um65sag-datasheet
APTM100UM65SAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3250W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM10AM02FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM10AM02FG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
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APTM10DAM02G index.php?option=com_docman&task=doc_download&gid=8042
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 495A SP6
Produkt ist nicht verfügbar
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APTM10DSKM09T3G
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 139A SP3
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
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APTM10DSKM19T3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 70A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM10DUM02G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM10HM05FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM10HM05FG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 100V 278A SP6
Supplier Device Package: SP6
Packaging: Bulk
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
Power - Max: 780W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
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APTM10HM09FT3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 100V 139A SP3
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
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APTM10HM19FT3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM10HM19FT3G
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 100V 70A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM10SKM02G index.php?option=com_docman&task=doc_download&gid=8058
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 495A SP6
Produkt ist nicht verfügbar
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APTM10SKM05TG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 278A SP4
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP4
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM10TAM09FPG
APTM10TAM09FPG
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 100V 139A SP6-P
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
Power - Max: 390W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Supplier Device Package: SP6-P
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Produkt ist nicht verfügbar
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APTM10UM01FAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM10UM01FAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 860A SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 4V @ 12mA
Power Dissipation (Max): 2500W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar
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APTM10UM02FAG index.php?option=com_docman&task=doc_download&gid=8065
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 570A SP6
Produkt ist nicht verfügbar
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APTM120A15FG index.php?option=com_docman&task=doc_download&gid=8066
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 60A SP6
Produkt ist nicht verfügbar
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APTM120A20DG index.php?option=com_docman&task=doc_download&gid=8067
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 50A SP6
Produkt ist nicht verfügbar
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APTM120A20SG 8068-aptm120a20sg-datasheet
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 50A SP6
Produkt ist nicht verfügbar
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APTM120A29FTG 8069-aptm120a29ftg-datasheet
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 34A SP4
Produkt ist nicht verfügbar
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APTM120DA30T1G 8075-aptm120da30t1g-datasheet
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 657W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM120DU15G index.php?option=com_docman&task=doc_download&gid=8080
APTM120DU15G
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 60A SP6
Produkt ist nicht verfügbar
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APTM120H140FT1G 8082-aptm120h140ft1g-datasheet
APTM120H140FT1G
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1200V 8A SP1
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 208W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM120H29FG APTM120H29FG-Rev2.pdf
APTM120H29FG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1200V 34A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 34A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 780W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM120U10SAG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM120U10SAG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 116A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 20mA
Power Dissipation (Max): 3290W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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APTM120UM70DAG index.php?option=com_docman&task=doc_download&gid=8101
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
Produkt ist nicht verfügbar
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APTM120UM70FAG index.php?option=com_docman&task=doc_download&gid=8103
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 171A SP6
Produkt ist nicht verfügbar
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APTM20AM04FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20AM04FG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Drain to Source Voltage (Vdss): 200V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Part Status: Active
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 372A
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+457.44 EUR
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APTM20AM05FG APTM20AM05F.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 317A
Drain to Source Voltage (Vdss): 200V
Power - Max: 1136W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM20AM06SG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 300A SP6
Part Status: Active
Supplier Device Package: SP6
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 300A
Drain to Source Voltage (Vdss): 200V
Power - Max: 1250W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
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APTM20AM08FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20AM10FTG APTM20AM10FTG-Rev3.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20AM10STG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20DAM04G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20DAM05G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20DAM05G
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20DAM08TG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Produkt ist nicht verfügbar
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APTM20DUM04G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20DUM04G
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20DUM05G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 317A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1136W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20DUM08TG 8130-aptm20dum08tg-datasheet
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Active
Produkt ist nicht verfügbar
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APTM20HM08FG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APTM20HM08FG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 208A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20HM10FG APTM20HM10FG-Rev3.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 175A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
Produkt ist nicht verfügbar
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APTM20HM16FTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 104A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
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APTM20HM20FTG APTM20HM20FTG-Rev4.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
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APTM20HM20STG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 200V 89A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
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