APTGT600A60G Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT MODULE 600V 700A 2300W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 386.41 EUR |
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Technische Details APTGT600A60G Microchip Technology
Description: IGBT MODULE 600V 700A 2300W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 700 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 2300 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 49 nF @ 25 V.
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| APTGT600A60G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 600A Power dissipation: 2.3kW Pulsed collector current: 800A Max. off-state voltage: 0.6kV Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Technology: Field Stop Case: SP6 Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT |
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