APTGT600A60G Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT MODULE 600V 700A 2300W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2300 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
auf Bestellung 31 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 842.58 EUR |
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Technische Details APTGT600A60G Microchip Technology
Description: IGBT MODULE 600V 700A 2300W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 700 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 2300 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 49 nF @ 25 V.
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| APTGT600A60G | Hersteller : MICROSEMI |
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auf Bestellung 3 Stücke: Lieferzeit 7-21 Tag (e) |
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| APTGT600A60G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 600A Case: SP6 Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Power dissipation: 2.3kW Technology: Field Stop Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APTGT600A60G | Hersteller : Microchip Technology |
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APTGT600A60G | Hersteller : Microchip Technology |
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| APTGT600A60G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 600A Case: SP6 Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Power dissipation: 2.3kW Technology: Field Stop Mechanical mounting: screw |
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