APTGT75H60T1G Microchip Technology
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
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Technische Details APTGT75H60T1G Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP1, Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 250 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 100 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Full Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk.
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